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Thin film transistor and display device

A thin-film transistor and pattern technology, applied in the field of display devices and thin-film transistors, can solve the problems of low mobility, difficulty in achieving large size, poor uniformity, etc.

Active Publication Date: 2020-10-30
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, TFTs that use low-temperature polysilicon as the material of the active layer have problems of poor uniformity and difficulty in achieving large sizes.
TFTs that use oxide semiconductors as active layer materials have a problem of low mobility

Method used

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  • Thin film transistor and display device
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  • Thin film transistor and display device

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Embodiment Construction

[0037] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0038] The display device can be used as a mobile phone, a tablet computer, a personal digital assistant (personal digital assistant, PDA), a vehicle-mounted computer, etc. The embodiment of the present invention does not specifically limit the specific application of the display panel.

[0039] Such as figure 1 As shown, the display device may include, for example, a frame 1 , a display panel 2 , a circuit board 3 , a cover 4 , and other electronic accessorie...

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Abstract

The embodiment of the invention provides a thin film transistor and a display device, relates to the technical field of display, and can improve the mobility and switching ratio of the thin film transistor at the same time. The thin film transistor includes a grid electrode disposed on a substrate, an active pattern including carbon nanotubes, an auxiliary grid electrode, a source electrode and adrain electrode, the auxiliary grid electrode is electrically connected to the drain electrode; the active pattern comprises a plurality of strip-shaped sub-patterns which extend in a first directionand are arranged at intervals; and in the first direction, one end of each strip-shaped sub-pattern in the active pattern is in contact with the source electrode, and the other end of each strip-shaped sub-pattern in the active pattern is in contact with the drain electrode.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor and a display device. Background technique [0002] In recent years, users' demand for high-quality display panels has gradually increased, and furthermore, the requirements for thin-film transistors (Thin-film transistor, TFT for short) have also become higher and higher. [0003] Currently, Low Temperature Poly-silicon (LTPS for short) or an oxide semiconductor is commonly used as the material of the active layer. However, the TFT using low-temperature polysilicon as the material of the active layer has the problems of poor uniformity and difficulty in achieving a large size. A TFT using an oxide semiconductor as an active layer material has a problem of low mobility. Contents of the invention [0004] Embodiments of the present invention provide a thin film transistor and a display device, which can improve the mobility and switching ratio of the th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L29/06H01L29/417H01L27/12H01L27/32H01L27/15G02F1/1368
CPCH01L29/78684H01L29/0669H01L29/41733H01L29/41775H01L27/1222H01L27/156G02F1/1368H01L27/12H01L27/15H01L29/06H01L29/417H01L29/786
Inventor 袁广才郭康董学
Owner BOE TECH GRP CO LTD