Van der Waals heterojunction and preparation method thereof, anode material and field effect transistor

Abstract

The invention belongs to the technical field of high polymer materials, and discloses a Van der Waals heterojunction and a preparation method thereof, an anode material and a field effect transistor.The Van der Waals heterojunction is formed by compounding hafnium disulfide and molybdenum disulfide. The synthetic method of the heterojunction comprises the following steps: preparing the high-purity molybdenum disulfide film on a SiO2 substrate by using a chemical vapor deposition process; and preparing the hafnium disulfide on the molybdenum disulfide substrate by using a molecular epitaxial beam process to obtain the HfS2-MoS2 heterojunction with different thicknesses. The heterojunction obtained by the method provided by the invention has very high carrier mobility, a controllable forbidden band width and higher surface activity, can be used for photoelectrocatalytic decomposition of water and pollutants, and can also be used for preparing the field effect transistor; the growth timecan be controlled in the preparation process according to requirements, so that heterojunction with different thicknesses can be obtained; an on the basis of the heterojunction, the novel semiconductor field effect transistor is designed. At present, the invention patent is not disclosed.

Description

technical field [0001] The invention belongs to the technical field of polymer materials, and in particular relates to a van der Waals heterojunction and a preparation method thereof, an anode material and a field effect tube. Background technique [0002] At present, the closest existing technology: the use of molecular epitaxy beam method, the preparation of MoSe 2 -HfSe 2 Heterojunction. The disadvantage of this method is that hafnium diselenide (HfSe 2 ) has a slightly narrower bandgap of about 1.1eV, which cannot meet the minimum requirement for photocatalytic water splitting (1.23eV), and compared with molybdenum diselenide, the bandgap and band edge position of molybdenum disulfide are more suitable for For splitting water, this has been discussed in the literature. Therefore, considering the preparation of van der Waals heterojunction MoS by molybdenum disulfide and hafnium disulfide 2 -HfS 2 , is a feasible solution for photocatalytic water splitting and field...

AI Technical Summary

Problems solved by technology

[0005] To sum up, the problems existing in the prior art are: a single two-dimensional nanomaterial cannot meet the existing practical needs, and there are low carrier mobility and low surface activity; or it is unstable in the air and the preparation conditions are harsh. ; Or the width of the forbidden band and the position of the band edge are inappropriate

Due to the large variety of two-dimensional nanomaterials, it is a cumbersome and huge project to find two materials with composite conditions to complement each other.

Although it can be considered theoretically that van der Waals heterojunctions can be established between any two-dimensional nanomaterials, the properties of different materials vary greatly, and the preparation processes are also different. There are also difficulties in the operation of heterojunction

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