A thin film transistor and display device
A thin-film transistor and pattern technology, which is applied in the field of display devices and thin-film transistors, can solve problems such as poor uniformity, difficulty in realizing large size, and low mobility, and achieve the effects of increasing switching ratio, improving bipolarity, and improving low mobility
Active Publication Date: 2022-02-01
BOE TECH GRP CO LTD
View PDF4 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, TFTs that use low-temperature polysilicon as the material of the active layer have problems of poor uniformity and difficulty in achieving large sizes.
TFTs that use oxide semiconductors as active layer materials have a problem of low mobility
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0037] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0038] The display device can be used as a mobile phone, a tablet computer, a personal digital assistant (personal digital assistant, PDA), a vehicle-mounted computer, etc. The embodiment of the present invention does not specifically limit the specific application of the display panel.
[0039] Such as figure 1 As shown, the display device may include, for example, a frame 1 , a display panel 2 , a circuit board 3 , a cover 4 , and other electronic accessorie...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| width | aaaaa | aaaaa |
Login to View More
Abstract
An embodiment of the present invention provides a thin film transistor and a display device, which relate to the field of display technology and can improve the mobility and the switching ratio of the thin film transistor at the same time. A thin film transistor, comprising a gate disposed on a substrate, an active pattern comprising carbon nanotubes, an auxiliary gate, a source and a drain, the auxiliary gate is electrically connected to the drain; the active The source pattern includes a plurality of strip-shaped sub-patterns extending along a first direction and arranged at intervals; along the first direction, one end of each of the strip-shaped sub-patterns in the active pattern is connected to the source contact, and the other end is in contact with the drain.
Description
technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor and a display device. Background technique [0002] In recent years, users' demand for high-quality display panels has gradually increased, and furthermore, the requirements for thin-film transistors (Thin-film transistor, TFT for short) have also become higher and higher. [0003] Currently, Low Temperature Poly-silicon (LTPS for short) or an oxide semiconductor is commonly used as the material of the active layer. However, the TFT using low-temperature polysilicon as the material of the active layer has the problems of poor uniformity and difficulty in achieving a large size. A TFT using an oxide semiconductor as an active layer material has a problem of low mobility. Contents of the invention [0004] Embodiments of the present invention provide a thin film transistor and a display device, which can improve the mobility and switching ratio of the th...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L29/06H01L29/417H01L27/12H01L27/32H01L27/15G02F1/1368
CPCH01L29/78684H01L29/0669H01L29/41733H01L29/41775H01L27/1222H01L27/156G02F1/1368H01L27/12H01L27/15H01L29/06H01L29/417H01L29/786
Inventor 袁广才郭康董学
Owner BOE TECH GRP CO LTD