A molybdenum sulfide photodetector imitating retinal imaging and its preparation method
A photodetector, retina-like technology, used in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc. The effect of force, large field of view
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[0034] like figure 1 As shown, a method of preparing a sulfide molybdenum detector imaging mesh imaging, comprising the steps of:
[0035] (1) The sacrificial layer is deposited on the surface of the rigid substrate, and a flexible substrate is applied to the surface of the sacrificial layer;
[0036] (2) The insulating layer is deposited on the surface of the flexible substrate, and the graphene film is transferred to the surface of the insulating layer, etching the graphene film to obtain a graphene array electrode;
[0037] (3) Transfer the molybdenum sulfide film to the surface of the graphene array electrode, etching the vulcanized film film into a plurality of regular patterns, constitutes a flexible device array;
[0038] (4) After the flexible device array is peeled off from the rigid substrate, the spherical substrate surface is spliced to obtain a spherical sulfide molybdenum detector.
[0039] Further, the thickness of the molybdenum sulfide film is 0.1 nm to 0.2 nm. ...
Embodiment 1
[0053] (1) Select the heavy doped silicon wafer in which the appropriate size is selected, clean, and deposited a layer of metal as a sacrificial layer by magnetron sputtering, its thickness is 10 nm.
[0054] (2) Coating a layer of PMMA using a spin coater to a layer of PMMA as a flexible substrate, a thickness of 35 nm, and the rotation speed is 2000 r / s, and the acceleration is 600r / s. 2 .
[0055] (3) Separating the surface of the flexible substrate surface of step (2) by atomic layer Si 3 N 4 The film, the thickness is 5 nm, and the subsequent device preparation process has an effect on the flexible substrate.
[0056] (4) Using 0.74mol / L of FeCl 3 · 6h 2 O Solution corrosion copper foil, transfer the graphene film to Si using PMMA auxiliary wet transfer 3 N 4 surface.
[0057] (5) After the step (4), the graphene film is transferred to the SU8 photoresist, through the photolithography process, figure 1 The photoresist of the medium electrode position is retained after ...
Embodiment 2
[0065] (1) Select the appropriate size quartz piece, clean it, evaporate the sacrificial layer of a metal in the surface by electron beam, and the thickness is 5 nm.
[0066] (2) Using a spin coater to spin a layer of SEBS as a flexible substrate using a spin coater, a thickness of 50 nm, and the rotation speed is 2000 r / s, and the acceleration is 600r / s. 2 .
[0067] (3) Growing a layer of Allain by the PECVD coating process in step (2) 2 O 3 Thin film, thickness is 8 nm, avoiding subsequent device preparation processes to affect flexible substrates.
[0068] (4) Using 0.74mol / L of FeCl 3 · 6h 2 O Solution corrosion copper foil, transfer graphene film to Al by PMMA auxiliary wet transfer 2 O 3 surface.
[0069] (5) After the step (4), the graphene film is transferred to the SU8 photoresist, through the photolithography process, figure 1 The photoresist of the medium electrode position is retained after the exposure, forms a protective layer of graphene; after the photolitho...
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