A Test Structure for Dielectric Layer Defect Detection

Abstract

The invention provides a test structure for dielectric layer defect detection. The test structure comprises a main circuit, a bypass circuit, first to fifth bonding pads and a first switch, wherein the main circuit and the bypass circuit are connected in parallel; the main circuit comprises a to-be-tested capacitor structure; the first bonding pad and the second bonding pad are used for applying avoltage to the main circuit and the bypass circuit; the third bonding pad to the fifth bonding pad are used for editing conduction voltage of the bypass circuit; and the first switch is used for cutting off the circuit of the test structure when the leakage current of the to-be-tested capacitor structure exceeds a preset value. According to the invention, the external voltages of the third pad, the fourth pad and the fifth pad are changed to edit the conduction voltage of the bypass circuit, so that the defect detection items with different electric leakage threshold requirements can share one test structure, the number of the test structures is reduced, the area of a chip scribing channel occupied by the test structure for dielectric layer defect detection can be reduced, and the flexibility of the test structure during testing is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a test structure for detecting dielectric layer defects. Background technique [0002] As a very important structure in the reliability evaluation of semiconductor integrated circuits, the capacitor structure can be used for gate oxide dielectric layers, metal-insulator-metal (MIM) dielectric layers and metal oxide dielectric layers of metal-oxide semiconductor field effect transistors (MOSFETs). - Reliability assessment of oxide-metal (MOM) dielectric layers. [0003] When evaluating the reliability of the capacitor structure, the selection of the leakage threshold is very important. If the leakage threshold is too small, the weak point inside the capacitor will not generate enough leakage, and the location of the weak point of the capacitor structure will not be able to be located in the subsequent failure analysis. ; If the leakage threshold is too large, ...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a test structure for dielectric layer defect detection, which can solve the problem that the detection items required by different leakage thresholds cannot share the same test structure, and can also reduce the area occupied by the test structure for dielectric layer defect detection. , to improve the flexibility of the test structure during testing

Images