A waveguide-coupled photodetector and its preparation method
A photodetector and waveguide technology, applied in semiconductor devices, circuits, electrical components, etc., can solve the problems of difficult to prepare a small-width charge layer, and it is difficult to further reduce the size, and achieve the effect of effective light absorption and avalanche multiplication
Active Publication Date: 2022-02-25
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology
For waveguide-coupled avalanche photodetectors, since higher-energy ion implantation has certain requirements on the thickness of the photoresist, it is difficult to further reduce the size of ion implantation, so it is difficult to prepare a small-width charge layer.
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[0021] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0022] It should be noted that while examples of parameters including specific values may be provided herein, it should be understood that the parameters need not be exactly equal to the corresponding values, but rather approximate the corresponding values within acceptable error tolerances or design constraints. The directional terms mentioned in the embodiments, such as "upper", "lower", "front", "rear", "left", "right", etc., are only referring to the directions of the drawings. Therefore, the directions and terms used are used for illustration and are not used to limit the protection scope of the present invention.
[0023] figure 1 A schematic diagram of a cross-sectional structure of a waveguide-coupled photode...
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Abstract
The invention discloses a waveguide coupled photodetector and a preparation method thereof. Among them, one aspect of the present invention provides a waveguide-coupled photodetector, which may include: a substrate, including a bottom silicon material layer, a middle silicon dioxide buried layer, and a top layer of silicon; a waveguide layer and a microstructure multiplication region, composed of Part of the top silicon on the substrate is etched, wherein the microstructure multiplication region is used to adjust the electric field distribution and / or electric field strength, and a doped region is prepared in the waveguide layer and the microstructure multiplication region; the silicon dioxide window layer, Covering part of the surface of the waveguide layer, the microstructure multiplication region and the doping region, wherein an epitaxial window is opened on the silicon dioxide window layer; the light absorbing layer is arranged in the epitaxial window; the insulating medium layer is covered on the light absorbing layer And on the silicon dioxide window layer, an electrode window is opened on the silicon dioxide window layer and the insulating medium layer; the electrodes, including n electrodes and p electrodes, are arranged in the electrode windows.
Description
technical field [0001] The invention belongs to the field of semiconductor photodetectors, in particular to a waveguide-coupled photodetector and a preparation method thereof. Background technique [0002] With the continuous development of integrated circuits and the continuous improvement of integration density, traditional electrical interconnection has become the main bottleneck for performance improvement, mainly manifested in: delay increase, power consumption increase, and signal crosstalk increase. Due to the characteristics of high speed, high bandwidth and low power consumption of optical interconnection, on-chip optical interconnection based on silicon-based photonic devices is expected to solve the limitation of traditional electrical interconnection on the development of integrated circuits. Among them, silicon-based avalanche photodetector is one of the key components of silicon-based optical interconnection, and it is an important research topic in recent year...
Claims
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IPC IPC(8): H01L31/107H01L31/0232H01L31/0352H01L31/18
CPCH01L31/107H01L31/0352H01L31/035209H01L31/02327H01L31/1804Y02P70/50
Inventor 刘智成步文郑军薛春来
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI