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Semiconductor laser

A laser and semiconductor technology, used in semiconductor lasers, lasers, laser parts and other directions, can solve the problem of poor laser directionality, and achieve the effect of increasing the number of modes

Active Publication Date: 2020-11-17
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among them, low coherence is the main attack direction of scientific researchers. Many low coherence lasers have been designed, but the directionality of this type of laser is very poor.

Method used

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  • Semiconductor laser
  • Semiconductor laser
  • Semiconductor laser

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Embodiment Construction

[0021] The present invention proposes a semiconductor laser, which increases the number of modes by introducing a deformed mushroom-shaped cavity, which is used to weaken the coherence of the laser to reduce the influence of laser speckle on the display; in addition, by designing a semi- Circular scattering point and light-emitting surface, virtual elliptical cavity, ensure that the light-emitting surface is an elliptical arc surface, the center of the cross-section of the semicircular scattering point is located at the focus of the virtual elliptical cavity, and the distance between the end point of the light-emitting surface and the center of the circle is a virtual ellipse The focal length of the cavity can be adjusted to achieve consistent directionality of light output.

[0022] The invention designs a semiconductor laser with simple process, easy integration, low coherence and high directivity of electric injection, so as to solve the problem of speckle pattern in laser d...

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Abstract

A semiconductor laser comprises a deformed mushroom-shaped cavity, a light emitting surface and circular scattering points. The deformed mushroom-shaped cavity comprises a semicircular optical resonant cavity and a quasi-rectangular optical resonant cavity which are connected; the light emitting surface is an oval arc surface and is formed on the end surface of the quasi-rectangular optical resonant cavity; the cross section of the light emitting surface is obtained by intersection of a rectangle of the quasi-rectangular optical resonant cavity and an auxiliary elliptic curve; the circular scattering point is formed on one side of the semicircular optical resonant cavity, and the circle center of the cross section of the circular scattering point is located at the focal point of the auxiliary elliptic curve; and on the cross section of the semiconductor laser, the distance between the end point of the light emitting surface and the circle center of the circular scattering point is thefocal length of the auxiliary elliptic curve. According to the invention, multimode lasing is realized, and multimode directivity is ensured.

Description

technical field [0001] The invention relates to the technical field of laser display, in particular to a semiconductor laser with low coherence and high directivity applied to laser display. Background technique [0002] Display technology has evolved from the black and white display of cathode ray tubes at the beginning, to color display, and then to digital liquid crystal display later, to the popular large-size, large-color-gamut OLED display. Today's world is a world of rapid technological development. With the maturity and stability of laser technology, a new generation of display technology - laser display has emerged. As a display light source, the laser shows the following absolute advantages: ultra-long life, up to 20,000 hours of continuous work without attenuation; narrow spectral width, high color saturation can be obtained; high color gamut coverage, up to the range visible to the human eye The color gamut coverage rate of other light source display technologie...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/10H01S5/065H01S5/068
CPCH01S5/1082H01S5/0652H01S5/068
Inventor 郑婉华徐林海王宇飞贾宇飞
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI