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CMOS image sensor, pixel unit and control method thereof

A pixel unit and gate control technology, applied in the field of sensors, can solve the problem that the pixel unit does not have a high dynamic range, and achieve the effect of improving the dynamic range

Active Publication Date: 2020-11-17
BRIGATES MICROELECTRONICS KUNSHAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0013] However, the pixel unit of the existing global exposure structure does not have a high dynamic range

Method used

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  • CMOS image sensor, pixel unit and control method thereof
  • CMOS image sensor, pixel unit and control method thereof

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Embodiment Construction

[0034] In the image sensor including the existing global shutter structure, the dynamic range of the pixel unit is small, does not have a high dynamic range, and cannot meet the requirements of the high dynamic range application under the global shutter (Global Shutter).

[0035] According to different exposure methods, existing CMOS sensors can be divided into progressive exposure CMOS sensors and global exposure CMOS sensors. Global exposure means that all pixels in a frame of image start exposure at the same time at a certain moment, and end exposure at the same time at another moment. Global exposure can eliminate the motion blur defect of progressive exposure and achieve clear image output because the exposure time start point and end point of each row are the same. Both 5T and 9T are CMOS sensors with global exposure.

[0036] The pixel unit of the existing global exposure structure, according to

[0037] V=Q / C (2)

[0038] Among them, V, Q and C are divided into volt...

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Abstract

The embodiment of the invention provides a CMOS image sensor, a pixel unit and a control method thereof, the pixel unit comprises a global exposure structure suitable for outputting a first frame analog signal and an extension structure, and the extension structure is suitable for being coupled with the global exposure structure to output a second frame analog signal. And the extension structure includes a first control transistor, a third capacitor, a second control transistor, a fourth capacitor, a third control transistor, and a fifth capacitor, where a storage capacity of the third capacitor is greater than a storage capacity of the first storage node, the first control transistor selectively connects the third capacitor in parallel with the first storage node. According to the CMOS image sensor of the embodiment of the invention, the dynamic range of the pixel unit is expanded.

Description

technical field [0001] The invention relates to the technical field of sensors, in particular to a CMOS image sensor, a pixel unit and a control method thereof. Background technique [0002] An image sensor is a semiconductor device that converts light signals into electrical signals. Image sensors are divided into two categories: complementary metal oxide (CMOS) image sensors and charge-coupled device (CCD) image sensors. Due to the advantages of low power consumption, low cost, and easy integration with other devices, CMOS image sensors have been widely used in still digital cameras, digital video cameras, medical imaging devices, and automotive imaging devices. [0003] The dynamic range of the image sensor is a very important index parameter of the image sensor. The dynamic range refers to the range of the maximum light intensity signal and the minimum light intensity signal that the image sensor can simultaneously detect in the same image. Generally expressed in dB, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/374H04N5/355
CPCH04N25/58H04N25/76
Inventor 王林黄金德胡万景
Owner BRIGATES MICROELECTRONICS KUNSHAN