High-voltage electrostatic protection structure

Abstract

The invention discloses a high-voltage electrostatic protection structure, which is based on SCR, and is provided with a first high-voltage trap and a second high-voltage trap in a substrate, whereina first heavily doped region and a second heavily doped region are arranged in the first high-voltage trap, a third heavily doped region and a fourth heavily doped region are arranged in the second high-voltage trap, a fifth heavily doped region and a sixth heavily doped region are arranged on the surface layer of the substrate between the first high-voltage trap and the second high-voltage trap,the fifth heavily doped region is close to the first high-voltage trap, the sixth heavily doped region is close to the second high-voltage trap, the fifth heavily doped region stretches across the first high-voltage trap and the substrate, and the sixth heavily doped region stretches across the second high-voltage trap and the substrate. According to the invention, the shapes, the numbers and thediffusion radiuses of the fifth heavily doped region and the sixth heavily doped region are adjustable, so that the current distribution of the parasitic SCR structure can be flexibly controlled, thepurpose of adjusting the Snap-back sustaining voltage by adjusting the proportion of a current outflow path is achieved, and the antistatic capability of the device is improved.

Description

technical field [0001] The invention relates to the field of design and manufacture of semiconductor devices, in particular to a high-voltage electrostatic protection structure. Background technique [0002] Static electricity is an objective natural phenomenon, which can be produced in many ways, such as contact, friction, induction between electrical appliances, etc. Static electricity is characterized by long-term accumulation, high voltage, low power, small current and short action time. Static electricity causes serious harm in many fields. Friction electrification and human body static electricity are two major hazards in the electronics industry, which often cause unstable operation or even damage of electronic and electrical products. [0003] As the feature size of the semiconductor integrated circuit manufacturing process becomes smaller and smaller, the size of the chip unit is also smaller and smaller, and the antistatic ability of the chip becomes more and mor...

AI Technical Summary

Problems solved by technology

The maintenance voltage Vh of the traditional SCR structure generally does not exceed 10V after the Snap-back occurs, and there is a greater risk of latch-up in the application of the high-voltage port

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