High-voltage electrostatic protection structure

Abstract

The invention discloses a high-voltage electrostatic protection structure, which is located on a buried layer, is of a bilateral symmetry structure on the section, and comprises a first high-voltage trap having first conductive type and located in a center region, a second high-voltage trap and a third high-voltage trap, wherein the second high-voltage trap and the third high-voltage trap are located on the two sides of the first high-voltage trap and have second conductive types, in the first high-voltage trap, a heavily doped region I having second conductive type is arranged in the centralregion of the first high-voltage trap, a first field oxide, a heavily doped region II having first conductive type and a second field oxide are symmetrically arranged on two sides of the heavily dopedregion I in sequence, and in the second high-voltage trap, a source region and a heavily doped region III having a LDMOS device are arranged, and a third field oxide is arranged between the source region and the heavily doped region III at an interval. According to the invention, the polygonal or circular injection regions with adjustable quantity and diffusion radius are added in the high-voltage well region where the primary drain region is located, so that the current distribution of the parasitic SCR structure is flexibly controlled, the proportion of a current outflow path is adjusted, and the antistatic capability of the device is improved.

Description

technical field [0001] The invention relates to the field of design and manufacture of semiconductor devices, in particular to a high-voltage electrostatic protection structure. Background technique [0002] Static electricity is an objective natural phenomenon, which can be produced in many ways, such as contact, friction, induction between electrical appliances, etc. Static electricity is characterized by long-term accumulation, high voltage, low power, small current and short action time. Static electricity causes serious harm in many fields. Friction electrification and human body static electricity are two major hazards in the electronics industry, which often cause unstable operation or even damage of electronic and electrical products. [0003] As the feature size of the semiconductor integrated circuit manufacturing process becomes smaller and smaller, the size of the chip unit is also smaller and smaller, and the antistatic ability of the chip becomes more and mor...

AI Technical Summary

Problems solved by technology

One-way thyristor is a controllable rectifier electronic component, which can be turned from off to on under the action of an external control signal, but once it is turned on, the external signal cannot turn it off, only by removing the load or reducing the voltage. The voltage at both ends makes it turn off), which can greatly improve the ESD capability, but the maintenance voltage Vh of the pure SCR structure after Snap-back generally does not exceed 10V, and there is a greater risk of latch-up in the application of high-voltage ports

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