Method for forming channel hole of three-dimensional memory device, and three-dimensional memory device

A three-dimensional storage and channel technology, applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of unfavorable performance and influence of three-dimensional memory, and achieve the effect of optimizing the support function, avoiding damage, and improving the support performance.

Pending Publication Date: 2020-12-01
YANGTZE MEMORY TECH CO LTD
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  • Abstract
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Problems solved by technology

Both of these situations will adversely affect the subse

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  • Method for forming channel hole of three-dimensional memory device, and three-dimensional memory device
  • Method for forming channel hole of three-dimensional memory device, and three-dimensional memory device
  • Method for forming channel hole of three-dimensional memory device, and three-dimensional memory device

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Embodiment Construction

[0040] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0041] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.

[0042] Secondly, the present invention is described in detail in combination with schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the gener...

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Abstract

The present invention relates to a method for forming a channel hole of a three-dimensional memory device. The method comprises the steps: providing a substrate, a stacking layer located on the substrate and a dielectric layer covering the stacking layer, wherein the stacking layer comprises a plurality of insulating layers and a plurality of dummy gate layers which are stacked alternately; forming virtual channel holes penetrating through the dielectric layer and the stacking layer, wherein the virtual channel hole reaches the substrate; and respectively filling the virtual channel holes witha plurality of materials, wherein the plurality of materials have different hardness.

Description

technical field [0001] The present invention relates to semiconductor manufacturing, and in particular to methods for forming channel holes for three-dimensional memory devices and three-dimensional memory devices. Background technique [0002] In order to overcome the limitation of the two-dimensional memory, the industry has developed a memory having a three-dimensional (3D) structure, which improves integration density by three-dimensionally arranging memory cells on a substrate. [0003] Furthermore, in a three-dimensional memory such as 3D NAND flash memory, the memory array may include a core area and a step area. The step area is used to lead out the contact portion of the control gate in each layer of the memory array as a word line connection area. These control gates are used as word lines of the memory array to perform operations such as programming, erasing and writing, and reading. In the manufacturing process of 3D NAND flash memory, contact holes are formed ...

Claims

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Application Information

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IPC IPC(8): H01L27/11524H01L27/11556H01L27/1157H01L27/11582
CPCH10B41/35H10B41/27H10B43/35H10B43/27
Inventor 刘思敏许波郭亚丽
Owner YANGTZE MEMORY TECH CO LTD
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