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m12 large size silicon wafer cutting method

A silicon wafer cutting and large-size technology, applied in the direction of manufacturing tools, stone processing equipment, fine working devices, etc., can solve the problems that cannot meet the requirements of M12 large-size silicon wafer cutting

Active Publication Date: 2022-08-05
阜宁协鑫光伏科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Based on this, it is necessary to address the problem that the traditional cutting method cannot meet the cutting requirements of M12 large-size silicon wafers, and propose a cutting method for M12 large-size silicon wafers

Method used

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  • m12 large size silicon wafer cutting method
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] The diamond wire reciprocates, the one-way cycle length is 1600m, and the line speed of the diamond wire is 35m / s. The initial feed rate of the worktable is 1mm / min; within the cutting depth range of 0mm~30mm, the feed rate of the worktable is 1.2mm / min; within the cutting depth range of 30mm~90mm, the feed rate of the worktable is 2.9 mm / min; 90mm The feed rate of the worktable within the cutting depth range of ~180mm is 2.7 mm / min; within the cutting depth range of 180mm~218mm, the feed rate of the worktable is 0.1~2.3mm / min. The cutting fluid temperature is 19°C. Cutting under the above parameters, there is basically no wire breakage. In addition, the TTV value of the silicon wafer is detected to be less than or equal to 25um, which meets the index requirements of the TTV value of less than or equal to 30um.

Embodiment 2

[0050] The diamond wire reciprocates, the one-way cycle length is 1850m, and the line speed of the diamond wire is 38m / s. The initial feed rate of the worktable is 1mm / min; the feed rate of the worktable within the cutting depth range of 0mm~30mm is 1.8 mm / min; the feed rate of the worktable within the cutting depth range of 30mm~90mm is 2.95mm / min; 90mm The feed rate of the worktable within the cutting depth range of ~180mm is 2.62mm / min; within the cutting depth range of 180mm~218mm, the feed rate of the worktable is 0.1~2.2mm / min. The temperature of the cutting fluid is 20°C. Cutting under the above parameters, there is basically no wire breakage. In addition, the TTV value of the detected silicon wafer is less than or equal to 27um, which meets the index requirements of the TTV value less than or equal to 30um.

Embodiment 3

[0052] The diamond wire reciprocates, the one-way cycle length is 2000m, and the line speed of the diamond wire is 40m / s. The initial feed rate of the worktable is 1mm / min; the feed rate of the worktable within the cutting depth range of 0mm~30mm is 2.2 mm / min; the feed rate of the worktable within the cutting depth range of 30mm~90mm is 3 mm / min; 90mm The feed rate of the worktable within the cutting depth range of ~180mm is 2.7 mm / min; within the cutting depth range of 180mm~218mm, the feed rate of the worktable is 0.1~2.15mm / min. The cutting fluid temperature is 21°C. Cutting under the above parameters, there is basically no wire breakage. In addition, the TTV value of the detected silicon wafer is less than or equal to 29um, which meets the index requirements of the TTV value less than or equal to 30um.

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Abstract

The invention relates to a method for cutting M12 large-size silicon wafers, comprising: feeding a worktable to drive a silicon block to move toward a diamond wire, using a reciprocating diamond wire to start cutting the silicon block from a position of 0mm, and the diamond wire has a one-way cycle length of 1600m ~2000m; the feed speed of the worktable in the range of 30mm to 90mm cutting depth is greater than that in other cutting depth ranges. The diamond wire has a length of 1600m to 2000m per one-pass cycle, which is greatly increased compared with the prior art. During a single-pass cycle, the cutting depth of the diamond wire to cut the silicon block is greatly increased, and the number of commutations required to cut through the silicon block is less. Reduce the fatigue strength of diamond wire, reduce cutting wire breakage and TTV abnormality; the feed speed of the worktable in the range of 30mm ~ 90mm cutting depth in the early stage of cutting is greater than the feed speed in other cutting depth ranges, ensuring the overall cutting speed while reducing Cut the wire bow in the later stage.

Description

technical field [0001] The invention relates to the field of multi-wire cutting of silicon wafers, in particular to a method for cutting M12 large-size silicon wafers. Background technique [0002] In the photovoltaic field, when the size of the silicon wafer increases, the power of a single cell module can be increased, and the cost of components such as brackets and combiner boxes required by the power station can be reduced by the number of pieces. Therefore, M12 (side length 210mm, diagonal length 295mm) Large-size silicon wafers are gradually becoming a trend. However, for large-sized silicon wafers, the difficulty of cutting will increase greatly, and the existing silicon wafer cutting methods cannot be well adapted to the cutting of M12 silicon wafers. The main reasons include: due to the increase in the cutting area of ​​silicon wafers, the existing In the silicon wafer cutting method, the wear degree of the diamond wire and the heat generated are greatly increased,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B28D5/04
CPCB28D5/045
Inventor 史存振周文广
Owner 阜宁协鑫光伏科技有限公司