Substrate drying device

Abstract

The present invention relates to a substrate drying device, and the device comprises a chamber providing a drying space for drying a substrate; a supercritical fluid generation and storage unit that generates and stores a supercritical fluid supplied to the drying space within the chamber; and a supercritical fluid supply adjustment unit which is installed in the supply line between the supercritical fluid generation and storage unit and the chamber and adjusts the supercritical fluid to be supplied to the chamber stored in the supercritical fluid generation and storage unit, wherein the supercritical fluid supply adjustment unit comprises a main opening and closing valve which determines whether to supply the supercritical fluid stored in the supercritical fluid generation and storage unit, a metering valve adjusting a flow rate of the supercritical fluid passing through the main opening and closing valve, and an orifice installed between the main opening and closing valve and the metering valve and reducing a pressure difference applied to the metering valve by the supercritical fluid passing through the main opening and closing valve.

Description

technical field [0001] The invention relates to a substrate drying device. More specifically, the present invention relates to a substrate drying apparatus in which a supercritical fluid is supplied to a drying chamber at a certain pressurization rate under the same condition in each process, thereby improving the drying efficiency of a substrate using the supercritical fluid ; An orifice is installed at the front end of the metering valve of the supply line, which constantly buffers the flow of the supercritical fluid when the supercritical fluid is supplied to the substrate drying chamber, thereby preventing the flow rate fluctuation of the metering valve that regulates the flow rate to Provides the pressurization speed of supercritical fluid under the same conditions; and can prevent the metering valve from being damaged due to the high pressure difference generated in the metering valve during rapid pressurization, thereby prolonging the life of the valve to prevent the de...

AI Technical Summary

Problems solved by technology

[0005] However, according to conventional techniques for drying wafers such as figure 1 As shown, there has been a problem that during the drying process, the pattern formed on the wafer collapses due to the surface tension of the liquid i.e. IPA

Therefore, it is difficult to uniformly disperse supercritical fluid into the chamber for supply and discharge, resulting in reduced drying efficiency

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