A preparation method of SIC based ohmic contacts with ultra-high heat dissipation performance
A technology of heat dissipation performance and ohmic contact, which is applied in the field of SiC-based ohmic contact preparation, can solve the problem of sacrificing specific contact resistivity, achieve good high-temperature electrical performance, and reduce the effect of specific contact resistivity
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[0046] In order to achieve the purpose of improving the heat dissipation performance and high temperature stability of the ohmic contact structure without sacrificing the specific contact resistivity as much as possible, please refer to figure 1 , Figure 2a ~ Figure 2h , figure 1 It is a schematic flow chart of a method for preparing a SiC-based ohmic contact with ultra-high heat dissipation performance provided by an embodiment of the present invention, Figure 2a ~ Figure 2h It is a schematic structural diagram of a method for preparing a SiC-based ohmic contact with ultra-high heat dissipation performance provided by an embodiment of the present invention. This embodiment provides a method for preparing a SiC-based ohmic contact with ultra-high heat dissipation performance. The method for preparing a SiC-based ohmic contact with ultra-high heat dissipation performance includes the following steps:
[0047] Step 1. Select a SiC substrate.
[0048] Specifically, the SiC s...
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