Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

A preparation method of SIC based ohmic contacts with ultra-high heat dissipation performance

A technology of heat dissipation performance and ohmic contact, which is applied in the field of SiC-based ohmic contact preparation, can solve the problem of sacrificing specific contact resistivity, achieve good high-temperature electrical performance, and reduce the effect of specific contact resistivity

Active Publication Date: 2022-03-01
XIDIAN UNIV
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the traditional ohmic contact structure makes the ohmic contact have high temperature stability by adjusting the metal composition, process, etc., but sacrifices the specific contact resistivity to a certain extent, which is a compromise in performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A preparation method of SIC based ohmic contacts with ultra-high heat dissipation performance
  • A preparation method of SIC based ohmic contacts with ultra-high heat dissipation performance
  • A preparation method of SIC based ohmic contacts with ultra-high heat dissipation performance

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] In order to achieve the purpose of improving the heat dissipation performance and high temperature stability of the ohmic contact structure without sacrificing the specific contact resistivity as much as possible, please refer to figure 1 , Figure 2a ~ Figure 2h , figure 1 It is a schematic flow chart of a method for preparing a SiC-based ohmic contact with ultra-high heat dissipation performance provided by an embodiment of the present invention, Figure 2a ~ Figure 2h It is a schematic structural diagram of a method for preparing a SiC-based ohmic contact with ultra-high heat dissipation performance provided by an embodiment of the present invention. This embodiment provides a method for preparing a SiC-based ohmic contact with ultra-high heat dissipation performance. The method for preparing a SiC-based ohmic contact with ultra-high heat dissipation performance includes the following steps:

[0047] Step 1. Select a SiC substrate.

[0048] Specifically, the SiC s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thermal conductivityaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for preparing a SiC-based ohmic contact with ultra-high heat dissipation performance, comprising: selecting a SiC substrate; epitaxially growing graphene on the front side of the SiC substrate to form a graphene / SiC structure; Au film is deposited on the graphene; Ni metal is sputtered on the back of the SiC substrate to form the back electrode; the first transfer electrode pattern is formed on the Au film by photolithography; the Au not covered by the first transfer electrode pattern is etched away film; etch off the graphene not covered by the Au film; form the second transfer electrode pattern on the Au film by photolithography; etch the Au film not covered by the second transfer electrode pattern; deposit on the Au film Au material forms the front electrode and is annealed. The method of the present invention is a feasible preparation scheme. Compared with the traditional ohmic contact structure, the high-temperature electrical performance is better and more stable, and the specific contact resistivity can reach 10. ‑7 ~10 ‑8 order of magnitude.

Description

technical field [0001] The invention belongs to the technical field of SiC-based ohmic contacts, and in particular relates to a preparation method of SiC-based ohmic contacts with ultra-high heat dissipation performance. Background technique [0002] In the field of integrated circuit manufacturing, the preparation of ohmic contacts is an essential key process. In recent years, due to the demand for the application of semiconductor devices under high temperature conditions, researchers have continued to study the heat dissipation capability and thermal stability of devices. [0003] In the application environment of integrated circuits, there are many high-power situations such as engines, which tend to generate a lot of heat and increase the operating temperature of the device. At the same time, as the chip integration becomes higher and higher, the heat consumption becomes larger and larger. The high-temperature working environment will lead to deviation of device perfor...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/45H01L29/16H01L23/373
CPCH01L29/45H01L29/1608H01L23/3738
Inventor 胡彦飞纪宇婷梁佳博郭辉何艳静袁昊王雨田
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products