Unlock instant, AI-driven research and patent intelligence for your innovation.

An internal power generation circuit

A technology for generating circuits and internal power supplies, applied in the direction of adjusting electrical variables, instruments, control/regulation systems, etc., can solve problems such as low output voltage and inability to work with internal circuits, and achieve the effect of stabilizing internal power supplies

Active Publication Date: 2021-07-27
WUXI CHIPOWN MICROELECTRONICS
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the existing internal power generation circuit has a relatively low output voltage when the external power supply voltage is low, and cannot make the internal circuit work normally.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • An internal power generation circuit
  • An internal power generation circuit
  • An internal power generation circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] The existing internal power generation circuit is generally realized by the clamping effect of the diode, such as figure 1 As shown, the internal power supply generating circuit includes: the first resistor R1, the second resistance R2, the third resistance R3, the first capacitor C1, the first diode D1, and the NMOS transistor MN1, wherein the first diode D1 To clamp the diode, the drain of the NMOS transistor MN1 applies an external power source VDD. The basic working principle of the circuit is: When the external power supply VDD is powered on and reaches the on-threshold of the NMOS transistor MN1, the NMOS transistor MN1 opens to generate an internal power source Vout.

[0041]figure 2 Yes figure 1 The internal power supply generates a waveform diagram when the circuit is working. Depend on figure 2 It can be seen that figure 1 The implementation of the external power supply VDD reaches the forward conduction voltage of the first diode D1, the output voltage VOUT rises...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides an internal power generation circuit, including: a first internal power generation circuit, adapted to generate a first power signal according to an external power signal, the first internal power generation circuit includes an NMOS transistor, and the first power signal The voltage is lower than the threshold voltage of at least one NMOS of the external power supply voltage; the boost unit is adapted to boost the first power signal and output a boost signal, and the voltage of the boost signal is higher than the voltage of the first power signal by at least The threshold voltage of an NMOS transistor; a self-starting feedback circuit, adapted to generate an output voltage signal according to a boost signal and an external power supply signal, before the output voltage signal reaches the target voltage, the output voltage signal follows the magnitude of the external power supply signal, and After the output voltage signal reaches the target voltage, the output voltage signal maintains the target voltage. The internal power supply generation circuit provided by the embodiment of the present invention can output voltage to follow the external power supply.

Description

Technical field [0001] The present invention relates to the field of electronic circuit technology, and more particularly to an internal power supply generating circuit. Background technique [0002] At present, the low-voltage power supply of the chip internal circuit is generally transformed and regulated by the internal power supply generating circuit to the target voltage implementation. [0003] However, the existing internal power generation circuit is lower when the external power supply voltage is low, and the output voltage is relatively low and cannot operate the internal circuit. [0004] Therefore, there is a need for a new internal power supply circuit. Inventive content [0005] The problem to be solved by the present invention is: When using an NMOS transistor to generate a chip internal power source, the output voltage has a problem of NMOS transistor threshold loss relative to the external power source. [0006] In order to solve the above problems, embodiments ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G05F1/56
CPCG05F1/561G05F1/56G05F1/575G05F1/468
Inventor 管佳伟史文婷李海松易扬波张立新
Owner WUXI CHIPOWN MICROELECTRONICS