Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Double-path single-gap plasma injection device and application thereof

A plasma and injection device technology, applied in the field of plasma injection devices, can solve the problems of increasing the difficulty of ignition gap and low energy in injection gap, and achieve the effects of simple structure, long injection distance and stable trigger performance

Active Publication Date: 2020-12-22
XI AN JIAOTONG UNIV
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For applications with long distances and low work coefficients, the above-mentioned triggering methods all h

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Double-path single-gap plasma injection device and application thereof
  • Double-path single-gap plasma injection device and application thereof
  • Double-path single-gap plasma injection device and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] see figure 1 , a dual-channel single-gap plasma injection device, consisting of a first DC power supply, a freewheeling diode, a thyristor, a pulse capacitor, a pulse transformer, a second DC power supply, a main discharge capacitor, a protection inductor, and two plasma injectors .

[0050] Wherein, the pulse capacitor has a capacitance value of 1 μF, and is charged by the first DC power supply through the primary side of the pulse transformer. The discharge circuit is composed of the parallel circuit of the pulse capacitor, the thyristor and the freewheeling diode, and the primary side of the pulse transformer in series, and provides high-voltage trigger pulse output to the two plasma injectors.

[0051] The main discharge capacitor is charged by the second DC power supply, its capacitance value is 20uF, and its charging voltage is 3kV. When the thyristor is turned on, the pulse capacitor is discharged through the thyristor and the primary side of the pulse transfor...

Embodiment 2

[0057] see figure 1 , a dual-channel single-gap plasma injection device, consisting of a first DC power supply, a freewheeling diode, a thyristor, a pulse capacitor, a pulse transformer, a second DC power supply, a main discharge capacitor, a protection inductor, and two plasma injectors .

[0058] Wherein, the pulse capacitor has a capacitance value of 4 μF, and is charged by the first DC power supply through the primary side of the pulse transformer. The discharge circuit is composed of the parallel circuit of the pulse capacitor, the thyristor and the freewheeling diode, and the primary side of the pulse transformer in series, and provides high-voltage trigger pulse output to the two plasma injectors.

[0059] The main discharge capacitor is charged by the second DC power supply, its capacitance value is 60uF, and the charging voltage is 2kV. When the thyristor is turned on, the pulse capacitor is discharged through the thyristor and the primary side of the pulse transfor...

Embodiment 3

[0065] see figure 1 , a dual-channel single-gap plasma injection device, consisting of a first DC power supply, a freewheeling diode, a thyristor, a pulse capacitor, a pulse transformer, a second DC power supply, a main discharge capacitor, a protection inductor, and two plasma injectors .

[0066]Wherein, the pulse capacitor has a capacitance value of 4 μF, and is charged by the first DC power supply through the primary side of the pulse transformer. The discharge circuit is composed of the parallel circuit of the pulse capacitor, the thyristor and the freewheeling diode, and the primary side of the pulse transformer in series, and provides high-voltage trigger pulse output to the two plasma injectors.

[0067] The main discharge capacitor is charged by the second DC power supply, its capacitance value is 120uF, and the charging voltage is 1kV. When the thyristor is turned on, the pulse capacitor is discharged through the thyristor and the primary side of the pulse transfor...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Capacitanceaaaaaaaaaa
Diameteraaaaaaaaaa
Lengthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a double-path single-gap plasma injection device and application thereof. The plasma injection device is synchronously triggered by utilizing pulse discharge, a large capacitorwith initial energy storage is used for supplying energy to the process of capillary discharge ablation of an insulating gas production material in a plasma injector, and a large amount of plasma iscontinuously generated; and high-temperature, high-pressure and high-density plasma jet is formed based on the huge pressure difference inside and outside the capillary tube. The device adopts single-gap capillary discharge injection, is simple in structure, long in injection distance and stable in triggering performance, and can effectively meet the gap triggering requirements under the conditions of long spacing and low working coefficient. The pulse width and the current duration of discharge current in the capillary tube can be increased by increasing the capacitance of the main dischargecapacitor, so the duration of plasma injection is prolonged, and an important role is played in reliable triggering and conduction of the gap.

Description

technical field [0001] The invention belongs to the technical field of pulse power, and in particular relates to a dual-path single-gap plasma injection device and its application. Background technique [0002] With the development of pulse power technology, gas gaps have been widely studied and applied, and can be used as switching devices for high-voltage pulse formation, high-voltage pulse steepening switches, or overvoltage protection equipment for power equipment. The performance of the gas gap is often affected by the circuit parameters and the atmospheric environment, such as changes in temperature, humidity or pressure will affect the self-breakdown performance of the gap. When the working voltage is much lower than the self-breakdown voltage and the low working coefficient state, the gas gap is sometimes extended and jittery, which affects the reliability of the gap breakdown. [0003] Existing gas gaps often use forced triggering means, such as using small gap spa...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H05H1/36H05H1/44
CPCH05H1/36H05H1/44H05H1/3494
Inventor 杨兰均魏鹏曹博韩佳一路志建
Owner XI AN JIAOTONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products