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Strontium bismuth titanate/bismuth ferrite heterodielectric film and its preparation method and application

A strontium bismuth titanate, dielectric technology, applied in fixed capacitor dielectrics, thin film/thick film capacitors, multilayer capacitors, etc., can solve the problem that the film is difficult to obtain energy storage density, low dielectric constant and Curie temperature, high loss Breakdown field strength and other issues, to achieve good temperature stability, improve stability, and improve the effect of energy storage density

Active Publication Date: 2021-07-20
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among them, strontium bismuth titanate has recently received extensive attention due to its low loss and extremely high breakdown field strength, but pure strontium bismuth titanate thin films have low dielectric constant and Curie temperature (- 75 ℃), which makes it difficult to obtain high energy storage density of pure strontium bismuth titanate film, and the application range is limited

Method used

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  • Strontium bismuth titanate/bismuth ferrite heterodielectric film and its preparation method and application
  • Strontium bismuth titanate/bismuth ferrite heterodielectric film and its preparation method and application
  • Strontium bismuth titanate/bismuth ferrite heterodielectric film and its preparation method and application

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Experimental program
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Effect test

Embodiment 1

[0048] (1) According to the general chemical formula Sr 0.7 Bi 0.2 TiO 3 The stoichiometric ratio of bismuth nitrate and strontium acetate was weighed and dissolved in acetic acid, and stirred at room temperature for 20-30 minutes to prepare solution A.

[0049] (2) According to the general chemical formula Sr 0.7 Bi 0.2 TiO 3 The stoichiometric ratio of tetrabutyl titanate was weighed, and a certain amount of acetylacetone was weighed to dissolve tetrabutyl titanate in ethylene glycol methyl ether, and stirred at room temperature for 20-30 minutes to prepare solution B.

[0050] (3) Mix precursor solution A and precursor solution B, use acetic acid to adjust the concentration of the solution, use ammonia water to adjust the pH of the solution, and stir at room temperature for 300 minutes to prepare Sr 0.7 Bi 0.2 TiO 3 precursor solution.

[0051] (4) According to the general chemical formula BiFeO 3 Weigh bismuth nitrate and ferric nitrate in acetic acid, add an appr...

Embodiment 2

[0060] (1) According to the general chemical formula Sr 0.7 Bi 0.2 TiO 3 The stoichiometric ratio of bismuth nitrate and strontium acetate was weighed and dissolved in acetic acid, and stirred at room temperature for 20-30 minutes to prepare solution A.

[0061] (2) According to the general chemical formula Sr 0.7 Bi 0.2 TiO 3 The stoichiometric ratio of tetrabutyl titanate was weighed, and a certain amount of acetylacetone was weighed to dissolve tetrabutyl titanate in ethylene glycol methyl ether, and stirred at room temperature for 20-30 minutes to prepare solution B.

[0062] (3) Mix precursor solution A and precursor solution B, use acetic acid to adjust the concentration of the solution, use ammonia water to adjust the pH of the solution, and stir at room temperature for 300 minutes to prepare Sr 0.7 Bi 0.2 TiO 3 precursor solution.

[0063] (4) According to the general chemical formula BiFeO 3 Weigh bismuth nitrate and ferric nitrate in acetic acid, add an appr...

Embodiment 3

[0072] (1) According to the general chemical formula Sr 0.7 Bi 0.2 TiO 3 Weigh bismuth nitrate and strontium acetate in acetic acid, and stir at room temperature for 20-30 minutes to prepare solution A.

[0073] (2) According to the general chemical formula Sr 0.7 Bi 0.2 TiO 3 The stoichiometric ratio of tetrabutyl titanate was weighed, and a certain amount of acetylacetone was weighed to dissolve tetrabutyl titanate in ethylene glycol methyl ether, and stirred at room temperature for 20-30 minutes to prepare solution B.

[0074] (3) Mix precursor solution A and precursor solution B, use acetic acid to adjust the concentration of the solution, use ammonia water to adjust the pH of the solution, and stir at room temperature for 300 minutes to prepare Sr 0.7 Bi 0.2 TiO 3 precursor solution.

[0075] (4) According to the general chemical formula BiFeO 3 Weigh bismuth nitrate and ferric nitrate in acetic acid, add an appropriate amount of PVP to adjust the viscosity of th...

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Abstract

The invention relates to a strontium bismuth titanate / bismuth ferrite heterogeneous dielectric film and its preparation method and application. The chemical composition of the dielectric film is Sr 0.7 Bi 0.2 TiO 3 / x BiFeO 3 ,in x =1~3, said x is the number of layers of bismuth ferrite, and the dielectric film is a laminated structure with a heterogeneous material interface; its preparation method is a sol-gel method, and the precursor solution is configured according to the stoichiometric ratio, and then dropped into the cleaned Pt / Ti / SiO 2 / Si substrate spin-coated, sequentially through 200 o C‑450 o C‑700 oC For heat treatment, repeat the above spin coating and heat treatment processes until the film thickness is ~300 nm. Compared with the existing technology, the high energy storage density film capacitor prepared by the invention has excellent energy storage performance, and its energy storage density can reach 50.9 J / cm 3 , the energy storage efficiency can reach 52.84%, and the temperature stability is good.

Description

technical field [0001] The invention relates to the field of electronic functional materials and devices, in particular to a strontium bismuth titanate / bismuth ferrite heterogeneous dielectric film with high energy storage density and its preparation method and application. Background technique [0002] As the main passive energy storage device, dielectric capacitors have fast read charge and discharge rates and ultra-high power density, and are therefore widely used in electronic circuits, which can realize DC blocking, coupling, bypass, filtering, and tuning circuit, energy conversion and other functions. However, its development has encountered a bottleneck at present, and its energy storage density and energy storage efficiency are maintained at a low level. In addition, the temperature stability of current dielectric capacitors is poor. The current commercial dielectric energy storage density is only about 2 J / cm 3 , compared with electrochemical capacitors or batteri...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G4/08H01G4/33
CPCH01G4/08H01G4/33
Inventor 翟继卫宋佰洁闫浩沈波
Owner TONGJI UNIV