Wafer epitaxy reaction equipment

Abstract

The invention discloses wafer epitaxy reaction equipment, and the equipment comprises a conveying blade which is used for conveying a wafer to a first specified position in a reaction cavity, and carrying the wafer away from the first specified position after the growth of the wafer is completed; a reaction chamber, wherein a wafer lifting device and a displacement sensor are arranged in the reaction chamber; the wafer lifting device is used for driving the wafer to move between a first designated position and a second designated position and carrying the wafer for epitaxial growth; a displacement sensor used for monitoring the position data of the wafer at the second specified position; a controller used for judging whether the wafer generates transverse displacement or not according to the position data and triggering an alarm when a judgment result is that the wafer generates transverse displacement; wherein the controller is also used for adjusting the first specified position according to the position data when the alarm is triggered, so that the first specified position corresponds to the second specified position up and down. According to the equipment, the wafer lifting device can be ensured to place the wafer at a specified position without position deviation, so that the reject ratio of the wafer during epitaxial layer growth in epitaxial reaction equipment is reduced.

Description

technical field [0001] The application belongs to the technical field of silicon wafer manufacturing, and in particular relates to a wafer epitaxy reaction equipment. Background technique [0002] In the epitaxial layer production process, the wafer grows its epitaxial layer in the reaction chamber of the epitaxial reaction equipment. In this process, it is necessary to place the wafer at a designated position in the reaction chamber by means of a wafer lifting device in the reaction chamber to grow the epitaxial layer. When the position where the wafer is placed deviates from the specified position, the thickness of the grown epitaxial layer will be uneven, which will affect the quality of the wafer. [0003] In the related art, the wafer is supported by the wafer lifting device for lifting and lowering movement, so as to realize placing the wafer on a designated position for epitaxial growth. Specifically, the wafer lifting device includes: a pedestal, a pedestal support...

AI Technical Summary

Problems solved by technology

[0004] However, when the support arm of the wafer lift shaft supports the wafer lift pin for lifting movement, since the wafer lift pin and the support arm of the wafer lift shaft are in point contact, the wafer lift pin may be tilted. resulting in the wafer being placed on the susceptor off-center

At this time, the thickness of the epitaxial layer grown on the wafer is uneven, which will affect the quality of the wafer.

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