Supercharge Your Innovation With Domain-Expert AI Agents!

Metal pattern and metal patterning method

A metal patterning and metal patterning technology, applied in the field of subtractive manufacturing, can solve the problems of low production efficiency of etching process, and achieve the effect of improving chemical etching efficiency and easy reaction

Active Publication Date: 2021-01-12
BEIJING DREAM INK TECH CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of this, an object of the present invention is to propose a metal patterning method, to solve the problem of low preparation efficiency of traditional etching process in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Metal pattern and metal patterning method
  • Metal pattern and metal patterning method
  • Metal pattern and metal patterning method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The following description and drawings illustrate specific embodiments of the invention sufficiently to enable those skilled in the art to practice them. Other embodiments may incorporate structural, logical, electrical, process, and other changes. The examples merely represent possible variations. Individual components and functions are optional unless explicitly required, and the order of operations may vary. Portions and features of some embodiments may be included in or substituted for those of other embodiments. The scope of embodiments of the present invention includes the full scope of the claims, and all available equivalents of the claims. These embodiments of the present invention may be referred to herein, individually or collectively, by the term "invention", which is for convenience only and is not intended to automatically limit the application if in fact more than one invention is disclosed The scope is any individual invention or inventive concept.

...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a metal patterning method, and relates to the technical field of subtractive manufacturing. The metal patterning method comprises the following steps: forming an etching mask on a metal surface; coating liquid metal to an area, which is not covered by the etching mask, of the metal surface, so that the liquid metal corrodes the metal in the area, and forming an alloy reactant of the liquid metal and the area, which is not covered by the etching mask, of the metal surface; eliminating alloy reactants formed on areas which are not covered by the etching mask by applying etching liquid, so that a metal pattern which is consistent with the etching mask in shape is obtained. According to the method, the liquid metal with active chemical properties is used for corroding the to-be-etched region of the metal firstly, so that the consistency of the metal in the region on the whole metal is reduced, the metal in the region can react with the etching liquid more easily, and the chemical etching efficiency is improved.

Description

technical field [0001] The invention belongs to the technical field of subtractive material manufacturing, and in particular relates to a metal pattern and a metal patterning method. Background technique [0002] Etching is a technology that removes materials using chemical reactions or physical impacts. Its earliest and most widely used is in the production of printed circuit boards, mainly by attaching masks to copper / aluminum plates, and then attaching masks The substrate is placed in the etching solution, so that through the chemical reaction between the etching solution and the substrate, the area of ​​the substrate not covered by the mask is eliminated, thereby forming the required circuit. [0003] Although the above-mentioned traditional chemical etching process is constantly developing and progressing, and its production cost has been reduced in a large range, it takes about 20 minutes for the existing etching solution to chemically etch the substrate, that is, the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H05K3/06
CPCH05K3/062H05K3/067H05K3/068
Inventor 于洋
Owner BEIJING DREAM INK TECH CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More