Light emitting diode epitaxial wafer and preparation method thereof

Abstract

The invention discloses a light emitting diode epitaxial wafer and a preparation method thereof, which belong to the field of light emitting diode manufacturing. The p-type GaN layer is provided witha plurality of hole injection grooves which are distributed at intervals, and each hole injection groove and the GaN hole injection structure which fills the hole injection groove extend from the p-type GaN layer to the multi-quantum well layer. The GaN hole injection structure can play a role of a channel, and the GaN hole injection structure crosses the AlGaN electron blocking layer to directlyguide holes in the p-type GaN layer into the multi-quantum well layer. Holes are subjected to resistance when entering the multi-quantum well layer through the GaN hole injection structure, and the resistance is smaller than that of holes entering the multi-quantum well layer through the AlGaN electron blocking layer. Therefore, more holes can enter the multi-quantum well layer through the GaN hole injection structure to be compounded with electrons to emit light. The number of holes entering the multi-quantum well layer is increased, and the luminous efficiency of the finally obtained light emitting diode is also improved.

Description

technical field [0001] The invention relates to the field of light-emitting diode production, in particular to a light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] A light emitting diode is a semiconductor electronic component that emits light. As an efficient, environmentally friendly and green new solid-state lighting source, it is being rapidly and widely used, such as traffic lights, car interior and exterior lights, urban landscape lighting, mobile phone backlight, etc. Improving the luminous efficiency of chips is the goal that LEDs are constantly pursuing. [0003] In the related art, an epitaxial wafer of a light emitting diode usually includes a substrate and an n-type GaN layer, a multi-quantum well layer, an AlGaN electron blocking layer and a p-type GaN layer grown sequentially on the substrate. The AlGaN electron blocking layer between the multi-quantum well layer and the p-type GaN layer can play a role in bloc...

AI Technical Summary

Problems solved by technology

The AlGaN electron blocking layer between the multi-quantum well layer and the p-type GaN layer can play a role in blocking the electron overflow in the multi-quantum well layer, but at the same time, the AlGaN electron blocking layer will also prevent the holes from the p-type GaN layer. Enter the multi-quantum well layer, making it more difficult for the holes whose mobility is lower than that of electrons to enter the multi-quantum well layer

The number of holes entering the multi-quantum well layer is much less than that of electrons, and there are fewer holes that can recombine with electrons in the multi-quantum well layer, and the luminous efficiency of the resulting light-emitting diode is still not high enough.

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