13 results about "Electron recombination" patented technology

The application discloses a display panel, a manufacturing method thereof and an evaporation device, and belongs to the technical field of display. The display panel comprises a plurality of light-emitting parts, and each light-emitting part comprises a plurality of stacked unit material layers. The density of at least one of the blue light-emitting part and the green light-emitting part is greater than the density of the red light-emitting part, and the density is the ratio of the number of unit material layers in the light-emitting part to the thickness of the light-emitting part. Since the more the number of unit material layers in the light-emitting part is, the more uniform the doping degree of the at least two light-emitting materials in the light-emitting part is, and the higher the probability of the recombination of holes and electrons in the light-emitting part to form excitons is, the longer the light-emitting life of the light-emitting part is without changing the overall thickness of the light-emitting part, therefore, the light-emitting life of at least one of the blue light-emitting part and the green light-emitting part can be improved by increasing the density of at least one of the blue light-emitting part and the green light-emitting part, so that the light-emitting life of the blue light-emitting part, the green light-emitting part and the red light-emitting part is relatively close.

This application relates to a perovskite solar cell, its fabrication method, a tandem solar cell, and a photovoltaic module. The perovskite solar cell includes a first electrode, a hole transport layer, a perovskite light-absorbing layer, and a second electrode. The hole transport layer is located between the first electrode and the perovskite light-absorbing layer, and between the hole transport layer and the second electrode. The hole transport layer comprises a compound shown in formula (I). This perovskite solar cell uses the compound shown in formula (I) as the hole transport layer material. The compound shown in formula (I) is a polymer, and its monomers are based on indolo[3,2-b]carbazole, with fluorine-substituted benzothiadiazole groups and phosphonic acid groups introduced. This can passivate defects in the perovskite light-absorbing layer, suppress interfacial electron recombination, and enable the perovskite solar cell to achieve better photoelectric conversion efficiency.

This invention discloses a cadmium telluride thin-film solar cell based on a p-type copper oxide back contact layer and its fabrication method, belonging to the field of solar cell technology. The cadmium telluride thin-film solar cell comprises, from bottom to top, a transparent conductive oxide thin film layer, a high-resistivity buffer layer, an n-type cell window layer, a p-type cell absorber layer, a back contact layer, and a back electrode layer; the back contact layer is made of CuMO2 material; wherein M is one or more of Al, Ga, In, Sc, and Y. This invention uses a p-type copper oxide thin film as the back contact layer, which can reflect photogenerated electrons at the cadmium telluride back surface to the PN junction, greatly reducing electron recombination at the cadmium telluride back surface, improving hole transport capability, and avoiding complex copper doping post-processing, thereby improving the open-circuit voltage and conversion efficiency of the cell.

The application belongs to the technical field of red light emitting diode epitaxy and chip manufacturing, and particularly relates to an AlGaInP red light emitting diode epitaxy and chip manufacturing method and chip. A buffer layer, an AlInP etching stop layer, an n-type ohmic contact layer, an n-AlInP roughening expansion layer, a waveguide layer, a multi-quantum well layer and a p-type layer are epitaxially grown on a GaAs substrate in sequence. A hole is opened by lithography, and a multilayer p electrode is evaporated in the hole. The epitaxial wafer is low-temperature bonded with a Si substrate on which a metal layer is evaporated, and is cooled in stages. After the substrate is removed, an n electrode pad layer is lithographically evaporated. A light emitting area is formed by etching, the AlInP etching stop layer is segmented and chemically wet roughened, a passivation layer is deposited, and a single device is obtained through thinning, back gold evaporation and laser cutting. The superlattice layer has a capacitive effect, which matches the hole and electron recombination time, reduces the electron leakage rate, the AlInP roughening layer cooperates with the segmented wet roughening process, improves the light extraction efficiency, the low-temperature bonding and the staged cooling effectively release the thermal stress, and improve the reliability.

Disclosed are a light-emitting device having excellent light efficiency. A light-emitting device includes: a substrate; an n-type cladding layer deposited on the substrate and implemented with a semiconductor material doped with an n-type dopant; an active layer deposited on the n-type cladding layer, in which holes and electrons provided from the n-type cladding layer recombine to generate light; a p-type semiconductor layer deposited on the active layer and providing holes to the active layer; a protective layer implemented with a material in which a light transmittance in a visible-wavelength band and an electrical conductivity are respectively at least a predetermined first reference value and at least a predetermined second reference value, the protective layer being deposited on the p-type semiconductor layer to protect the p-type semiconductor layer from an outside environment; and electrodes respectively formed on the n-type cladding layer and on the protective layer.

According to the gallium nitride Schottky diode and the preparation method thereof provided by the invention, the cost is effectively reduced by using the N-type SiC substrate, and the heat dissipation performance of the device is improved by using the high thermal conductivity of the SiC material. As the Mg-H structure in which Mg and H form a bond is formed in the P-type GaN layer, gradient activation of Mg is realized through the patterned hydrogen diffusion barrier layer, so that the activation rate of Mg in the electric field regulation and control region is gradually increased from the anode metal region to the periphery. The Mg activation doping concentration in the P-type GaN layer of the structure is distributed in a gradually-changing mode, holes in the area with the high Mg activation doping concentration and electrons in the N-type GaN layer are compounded more, the electrons are preferentially exhausted, the electron concentration in the N-type GaN layer is reduced from the edge of anode metal to the two sides, resistance is increased, then the area with the large resistance is preferentially resistant to voltage, and the resistance of the N-type GaN layer is improved. The electric field concentration phenomenon of the anode metal edge is effectively relieved, and the voltage endurance capability of the device is improved.

The invention provides a fluorene group-containing compound and an organic electroluminescent device thereof, and relates to the field of organic electroluminescent materials. The compound provided by the invention has good electron transport capability and hole blocking capability, and can effectively improve the luminous efficiency of a device and reduce the driving voltage of the device; the introduction of fluorene groups and Ar groups in molecules provides good conjugation ability for the molecules, can promote the transmission of charges in the material, reduces the energy loss in the electron transmission process, and improves the electron mobility; holes can be effectively prevented from being transmitted towards the cathode direction, so that more holes are limited in a light-emitting layer area to be compounded with electrons, and the light-emitting efficiency is improved. Through the synergistic effect of the fluorene group, the benzene bridge, the oxazole group, the Ar group and other structures, certain steric hindrance is achieved, polymerization among molecules can be effectively inhibited, the rigid support and stability of the molecules are improved, the stability of the molecular structure can be kept at a high temperature, and the service life of a device is prolonged.

This invention provides a heterocyclic compound and its organic electroluminescent device, specifically relating to the field of organic electroluminescent materials technology. To address the problem of shortened device lifetime caused by the recombination of some holes with electrons after penetrating the light-emitting layer, this invention provides a heterocyclic compound with good electron mobility and excellent electron transport capability. When used as an electron transport layer or hole blocking layer, it can improve the recombination rate of charge carriers in the light-emitting layer. Furthermore, when used as the host material, it can improve the luminous efficiency of the device, thereby extending its lifespan.

The invention discloses a photoelectric material determination method based on two-dimensional Janus-TNBr, and relates to the technical field of photoelectric materials. Target elements are obtained, a two-dimensional Janus layered structure model is constructed according to the target elements and input into software to be optimized to obtain a low-energy structure model, and the low-energy structure model is screened to obtain a low-energy stable structure model; performing light absorption and carrier mobility calculation on the low-energy stable structure model, performing screening to obtain a photoelectric structure model, and performing calculation on the photoelectric structure model to obtain a band edge relationship; a photocatalytic model and a heterojunction photovoltaic model are respectively determined according to a band-edge relationship of a model energy band, so that the photon-electron recombination rate is reduced, and the photoelectric conversion efficiency and the water photolysis activity are improved; first principle calculation design is adopted, research and development cost is reduced, and the period is shortened; the material can be used for solar cells and photocatalytic water decomposition at the same time, and has high stability and excellent performance through triple stability screening.

The invention provides an angiogenesis promoting wound repair material Ru / pCeO2 based on defective CeO2 as well as a preparation method and application thereof, and belongs to the technical field of biological medicines. The wound repair material Ru / pCeO2 based on defect type CeO2 is prepared, rich surface oxygen defects can be constructed by adjusting the crystal growth environment in the hydrothermal process, and photo-induced electron recombination is reduced; and meanwhile, Ru clusters are loaded on the surface of Ru / pCeO2, so that an energy band structure can be optimized, the performance of photocatalytic reduction of CO2 into CO is effectively improved, and a material foundation is laid for subsequent wound treatment. According to the invention, long-term, local and safe-concentration controllable release of CO gas is expected to be realized, and wound blood vessel repair is specifically promoted. Meanwhile, the whole body exposure risk and the oxygen deficit hidden danger of a traditional CO inhalation therapy are avoided, and a safer and more effective solution is provided for wound repair and revascularization treatment.

The invention relates to a perovskite cell and a preparation method thereof, a laminated cell and a photovoltaic module. The perovskite cell comprises a first electrode, a hole transport layer, a perovskite light absorption layer and a second electrode, the hole transport layer is located between the first electrode and the perovskite light absorption layer, the perovskite light absorption layer is located between the hole transport layer and the second electrode, and the hole transport layer comprises a compound shown in the formula (I). According to the perovskite cell, a compound shown in the formula (I) is adopted as a hole transport layer material, the compound shown in the formula (I) is a polymer, a polymeric monomer of the compound takes indolo [3, 2-b] carbazole as a core, and a fluorine-substituted benzothiadiazole group and a phosphonic acid group are introduced, so that defects in a perovskite light absorption layer can be passivated, an interface electron recombination phenomenon is inhibited, and the performance of the perovskite cell is improved. And the perovskite cell has relatively good photoelectric conversion efficiency.

The invention provides an organic electroluminescent device, and belongs to the technical field of organic electroluminescence. According to the organic light-emitting device provided by the invention, the hole transmission region comprises a structure shown in a formula I, and the electron transmission region comprises a structure shown in a formula II, so that the diffusion of electrons / holes transmitted to the light-emitting layer to the hole / electron transmission region can be effectively blocked, and the probability that the holes and the electrons in the light-emitting layer are compounded into excitons is increased; the injection efficiency of carriers (holes and electrons) among interfaces of all the layers is improved, transmission of the carriers among all the layers is balanced, and therefore the light-emitting efficiency of the organic light-emitting device is improved, and the service life of the organic light-emitting device is prolonged. The method has good application effect and industrialization prospect, and can be widely applied to the fields of display devices, lighting devices, solar cells, portable or mobile terminals, navigation terminals, game machines, TVs, computer displays and the like.

The invention provides a laminated solar cell, a photovoltaic system, a power generation device and a power utilization device. The laminated solar cell comprises a first electrode, a first light absorption layer, a first charge extraction layer, an upper conversion layer, a second charge extraction layer, a second light absorption layer and a second electrode which are sequentially laminated along a first direction; one of the first charge extraction layer and the second charge extraction layer is a hole transport layer, and the other one is an electron transport layer; the upconversion layer includes an upconversion material. In the laminated solar cell, holes and electrons extracted by the first charge extraction layer and the second charge extraction layer can be compounded in the upper conversion layer, energy generated by compounding of the holes and the electrons can be accumulated in the upper conversion layer under the action of the upper conversion material, and finally photons with energy higher than that of the holes and the electrons are radiated. Photons generated by radiation of the upper conversion layer can be absorbed again by the first light absorption layer and the second light absorption layer, and then the light current of the laminated solar cell is increased.