23 results about "Electron recombination" patented technology

The invention discloses an enhanced GaN HEMT (High Electron Mobility Transistor) device based on a composite gate and gate terminal expansion and a preparation method thereof, the p-InGaN and p-GaN / p + GaN layer heterojunction polarization effect in the composite gate structure of the enhanced GaN HEMT device can generate two-dimensional hole gas on an interface, and more holes are injected into a channel to be compounded with electrons when high leakage voltage is turned off; the electron concentration of the lower channel layer near the gate is reduced, so that electron capture of the buffer layer on the channel layer is inhibited, the dynamic performance of the device is improved, the reliability of the device is enhanced, the gate terminal expansion structure is utilized to expand the composite gate structure, the off-state electric field distribution of the device is optimized, and the reliability of the device is improved. The electric field peak value of the edge of the gate field plate can be redistributed and weakened, the current collapse effect is effectively restrained, and the preparation method of the device is simple in process and low in cost. According to the scheme, the gate stability and the dynamic performance of the device can be improved, and a reliable device basis is provided for a GaN power system with higher frequency, higher efficiency and higher power density.

The application discloses a display panel, a manufacturing method thereof and an evaporation device, and belongs to the technical field of display. The display panel comprises a plurality of light-emitting parts, and each light-emitting part comprises a plurality of stacked unit material layers. The density of at least one of the blue light-emitting part and the green light-emitting part is greater than the density of the red light-emitting part, and the density is the ratio of the number of unit material layers in the light-emitting part to the thickness of the light-emitting part. Since the more the number of unit material layers in the light-emitting part is, the more uniform the doping degree of the at least two light-emitting materials in the light-emitting part is, and the higher the probability of the recombination of holes and electrons in the light-emitting part to form excitons is, the longer the light-emitting life of the light-emitting part is without changing the overall thickness of the light-emitting part, therefore, the light-emitting life of at least one of the blue light-emitting part and the green light-emitting part can be improved by increasing the density of at least one of the blue light-emitting part and the green light-emitting part, so that the light-emitting life of the blue light-emitting part, the green light-emitting part and the red light-emitting part is relatively close.

The invention provides an analysis method and system for electron re-collision energy in a non-uniform laser field, and the method comprises the steps: obtaining a field intensity peak value and a space gradient as input parameters, constructing an electron motion equation frame based on a classical re-collision theory, solving and calculating return kinetic energy through employing a perturbation method, calculating output characteristics based on energy-momentum conservation, and obtaining an electron re-collision energy model. The method comprises the steps of obtaining multiple groups of data by repeating more than multiple rounds of operation so as to construct a sample database, and constructing a physical heuristic deep mapping network based on the sample database so as to obtain corrected output characteristics. An efficient physical approximation model is constructed by introducing a perturbation method, and a physical heuristic deep mapping network of physical constraints is constructed according to the efficient physical approximation model, so that a novel analysis method with both physical consistency and calculation efficiency is constructed.

This application relates to a perovskite solar cell, its fabrication method, a tandem solar cell, and a photovoltaic module. The perovskite solar cell includes a first electrode, a hole transport layer, a perovskite light-absorbing layer, and a second electrode. The hole transport layer is located between the first electrode and the perovskite light-absorbing layer, and between the hole transport layer and the second electrode. The hole transport layer comprises a compound shown in formula (I). This perovskite solar cell uses the compound shown in formula (I) as the hole transport layer material. The compound shown in formula (I) is a polymer, and its monomers are based on indolo[3,2-b]carbazole, with fluorine-substituted benzothiadiazole groups and phosphonic acid groups introduced. This can passivate defects in the perovskite light-absorbing layer, suppress interfacial electron recombination, and enable the perovskite solar cell to achieve better photoelectric conversion efficiency.

This invention discloses a cadmium telluride thin-film solar cell based on a p-type copper oxide back contact layer and its fabrication method, belonging to the field of solar cell technology. The cadmium telluride thin-film solar cell comprises, from bottom to top, a transparent conductive oxide thin film layer, a high-resistivity buffer layer, an n-type cell window layer, a p-type cell absorber layer, a back contact layer, and a back electrode layer; the back contact layer is made of CuMO2 material; wherein M is one or more of Al, Ga, In, Sc, and Y. This invention uses a p-type copper oxide thin film as the back contact layer, which can reflect photogenerated electrons at the cadmium telluride back surface to the PN junction, greatly reducing electron recombination at the cadmium telluride back surface, improving hole transport capability, and avoiding complex copper doping post-processing, thereby improving the open-circuit voltage and conversion efficiency of the cell.

The invention provides a nitrogen-containing heterocyclic compound and an organic electroluminescent device thereof, and particularly relates to the technical field of organic electroluminescence. The nitrogen-containing heterocyclic compound provided by the invention has relatively good hole blocking capability and relatively high electron mobility, and is applied to the organic electroluminescent device as an electron transport layer material or a hole blocking layer material, so that the transport balance of electrons and holes in the device is increased, the holes can be effectively blocked in a luminous layer, and the luminous efficiency of the organic electroluminescent device is improved. Part of holes are prevented from being compounded with electrons outside the light-emitting layer, the compounding probability of the electrons and the holes in the light-emitting layer is improved, the light-emitting efficiency of the device is effectively improved, the service life of the device is effectively prolonged, and good application effects and industrialization prospects are achieved.

The application discloses a unidirectional current barrier regulation and control light-emitting device, and relates to the field of photoelectric display, comprising: an anode, a first hole transport layer, a light-emitting recombination layer, a first electron transport layer, a cathode; the anode and the cathode form a first loop and apply a driving signal, and inject electrons and holes into the light-emitting recombination layer to recombine and emit light; the device further comprises a unidirectional throttling current barrier structure; the unidirectional throttling current barrier structure is arranged between the cathode and the first electron transport layer or arranged between the first hole transport layer and the anode; the unidirectional throttling current barrier structure participates in the recombination of the light-emitting recombination layer, and the recombination amount of electrons or the recombination amount of holes is adjusted to regulate and control the light-emitting efficiency of the device, so that the light-emitting efficiency of the device can be effectively improved.

The application belongs to the technical field of red light emitting diode epitaxy and chip manufacturing, and particularly relates to an AlGaInP red light emitting diode epitaxy and chip manufacturing method and chip. A buffer layer, an AlInP etching stop layer, an n-type ohmic contact layer, an n-AlInP roughening expansion layer, a waveguide layer, a multi-quantum well layer and a p-type layer are epitaxially grown on a GaAs substrate in sequence. A hole is opened by lithography, and a multilayer p electrode is evaporated in the hole. The epitaxial wafer is low-temperature bonded with a Si substrate on which a metal layer is evaporated, and is cooled in stages. After the substrate is removed, an n electrode pad layer is lithographically evaporated. A light emitting area is formed by etching, the AlInP etching stop layer is segmented and chemically wet roughened, a passivation layer is deposited, and a single device is obtained through thinning, back gold evaporation and laser cutting. The superlattice layer has a capacitive effect, which matches the hole and electron recombination time, reduces the electron leakage rate, the AlInP roughening layer cooperates with the segmented wet roughening process, improves the light extraction efficiency, the low-temperature bonding and the staged cooling effectively release the thermal stress, and improve the reliability.

Disclosed are a light-emitting device having excellent light efficiency. A light-emitting device includes: a substrate; an n-type cladding layer deposited on the substrate and implemented with a semiconductor material doped with an n-type dopant; an active layer deposited on the n-type cladding layer, in which holes and electrons provided from the n-type cladding layer recombine to generate light; a p-type semiconductor layer deposited on the active layer and providing holes to the active layer; a protective layer implemented with a material in which a light transmittance in a visible-wavelength band and an electrical conductivity are respectively at least a predetermined first reference value and at least a predetermined second reference value, the protective layer being deposited on the p-type semiconductor layer to protect the p-type semiconductor layer from an outside environment; and electrodes respectively formed on the n-type cladding layer and on the protective layer.

The application discloses a light-emitting device structure based on current grid light-emitting regulation, and relates to the field of photoelectric display, which comprises a current grid structure and a light-emitting functional structure; the light-emitting functional structure comprises, in sequence, a first conductive electrode layer, a first carrier transport layer, a light-emitting functional layer, a second carrier transport layer and a second conductive electrode layer; the current grid structure comprises, in sequence, a current grid electrode layer, a current grid current-limiting injection layer and a current grid transport layer; the current grid transport layer is in contact with the first conductive electrode layer; when the device structure emits light, a first driving signal is applied between the conductive electrode layers to drive the light-emitting functional layer to emit light through hole-electron recombination, and a bias driving signal is applied between the current grid electrode layer and the conductive electrode layer to control the migration amount of the first carrier participating in the recombination and light emission; the injection of electron carriers and hole carriers in the light-emitting functional layer can be regulated through the current grid structure, so that the light-emitting brightness or light-emitting efficiency can be optimized.

According to the gallium nitride Schottky diode and the preparation method thereof provided by the invention, the cost is effectively reduced by using the N-type SiC substrate, and the heat dissipation performance of the device is improved by using the high thermal conductivity of the SiC material. As the Mg-H structure in which Mg and H form a bond is formed in the P-type GaN layer, gradient activation of Mg is realized through the patterned hydrogen diffusion barrier layer, so that the activation rate of Mg in the electric field regulation and control region is gradually increased from the anode metal region to the periphery. The Mg activation doping concentration in the P-type GaN layer of the structure is distributed in a gradually-changing mode, holes in the area with the high Mg activation doping concentration and electrons in the N-type GaN layer are compounded more, the electrons are preferentially exhausted, the electron concentration in the N-type GaN layer is reduced from the edge of anode metal to the two sides, resistance is increased, then the area with the large resistance is preferentially resistant to voltage, and the resistance of the N-type GaN layer is improved. The electric field concentration phenomenon of the anode metal edge is effectively relieved, and the voltage endurance capability of the device is improved.

The application provides an organic electroluminescent device, and belongs to the technical field of organic electroluminescent devices.The organic electroluminescent device can effectively prevent the diffusion of the electrons / holes transferred to the light-emitting layer to the hole / electron transport region, so that the probability of the recombination of the holes and the electrons in the light-emitting layer into excitons is increased, and the recombination region of the excitons can be closer to the center of the light-emitting layer, so that the light-emitting efficiency of the organic electroluminescent device is greatly improved, and the irreversible decomposition reaction caused by oxidation due to the diffusion of the electrons / holes is avoided, so that the service life of the organic electroluminescent device is prolonged.The organic electroluminescent device has good application effect and industrialization prospect.

The invention provides a fluorene group-containing compound and an organic electroluminescent device thereof, and relates to the field of organic electroluminescent materials. The compound provided by the invention has good electron transport capability and hole blocking capability, and can effectively improve the luminous efficiency of a device and reduce the driving voltage of the device; the introduction of fluorene groups and Ar groups in molecules provides good conjugation ability for the molecules, can promote the transmission of charges in the material, reduces the energy loss in the electron transmission process, and improves the electron mobility; holes can be effectively prevented from being transmitted towards the cathode direction, so that more holes are limited in a light-emitting layer area to be compounded with electrons, and the light-emitting efficiency is improved. Through the synergistic effect of the fluorene group, the benzene bridge, the oxazole group, the Ar group and other structures, certain steric hindrance is achieved, polymerization among molecules can be effectively inhibited, the rigid support and stability of the molecules are improved, the stability of the molecular structure can be kept at a high temperature, and the service life of a device is prolonged.

The invention discloses a multi-scene dual-electron composite rate coefficient calculation system and method based on an adaptive strategy. The method comprises the following steps: 1, cleaning original data and generating a standardized input text; 2, on the basis of the obtained input text, core parameter calculation is carried out through a DR spectrum of a drspectrum module, and accurate spectrum parameters are obtained; 3, on the basis of the acquired accurate spectral parameters, the distribution of different application scenes is adapted to electron distribution models of different scenes; and step 4, based on the constructed electron distribution model, realizing full-process automatic accurate calculation of the double-electron composite DR rate coefficient in multiple scenes, and outputting an intermediate key data file and a scenarized rate coefficient file. According to the method, the most matched electronic distribution model and calculation formula can be automatically called according to different physical scenes, so that the problem of model universality is solved; the seamless connection of the whole process from original data cleaning, core parameter calculation to scenarized rate coefficient generation is realized, so that the fragmentation and error-prone problems are solved.

This invention provides a heterocyclic compound and its organic electroluminescent device, specifically relating to the field of organic electroluminescent materials technology. To address the problem of shortened device lifetime caused by the recombination of some holes with electrons after penetrating the light-emitting layer, this invention provides a heterocyclic compound with good electron mobility and excellent electron transport capability. When used as an electron transport layer or hole blocking layer, it can improve the recombination rate of charge carriers in the light-emitting layer. Furthermore, when used as the host material, it can improve the luminous efficiency of the device, thereby extending its lifespan.

An enhancement-mode gallium nitride (GaN) transistor includes a p-type gate configured to remove holes that accumulate under the gate metal. The gate has two electrodes: a gate electrode and a hole collector electrode. In a preferred embodiment, a negative voltage is applied to the hole collector electrode, attracting holes that accumulate under the gate metal. The attracted holes recombine with electrons supplied by the negative voltage, thereby substantially removing the holes.

The invention discloses a photoelectric material determination method based on two-dimensional Janus-TNBr, and relates to the technical field of photoelectric materials. Target elements are obtained, a two-dimensional Janus layered structure model is constructed according to the target elements and input into software to be optimized to obtain a low-energy structure model, and the low-energy structure model is screened to obtain a low-energy stable structure model; performing light absorption and carrier mobility calculation on the low-energy stable structure model, performing screening to obtain a photoelectric structure model, and performing calculation on the photoelectric structure model to obtain a band edge relationship; a photocatalytic model and a heterojunction photovoltaic model are respectively determined according to a band-edge relationship of a model energy band, so that the photon-electron recombination rate is reduced, and the photoelectric conversion efficiency and the water photolysis activity are improved; first principle calculation design is adopted, research and development cost is reduced, and the period is shortened; the material can be used for solar cells and photocatalytic water decomposition at the same time, and has high stability and excellent performance through triple stability screening.

The invention provides an angiogenesis promoting wound repair material Ru / pCeO2 based on defective CeO2 as well as a preparation method and application thereof, and belongs to the technical field of biological medicines. The wound repair material Ru / pCeO2 based on defect type CeO2 is prepared, rich surface oxygen defects can be constructed by adjusting the crystal growth environment in the hydrothermal process, and photo-induced electron recombination is reduced; and meanwhile, Ru clusters are loaded on the surface of Ru / pCeO2, so that an energy band structure can be optimized, the performance of photocatalytic reduction of CO2 into CO is effectively improved, and a material foundation is laid for subsequent wound treatment. According to the invention, long-term, local and safe-concentration controllable release of CO gas is expected to be realized, and wound blood vessel repair is specifically promoted. Meanwhile, the whole body exposure risk and the oxygen deficit hidden danger of a traditional CO inhalation therapy are avoided, and a safer and more effective solution is provided for wound repair and revascularization treatment.

The invention relates to a perovskite cell and a preparation method thereof, a laminated cell and a photovoltaic module. The perovskite cell comprises a first electrode, a hole transport layer, a perovskite light absorption layer and a second electrode, the hole transport layer is located between the first electrode and the perovskite light absorption layer, the perovskite light absorption layer is located between the hole transport layer and the second electrode, and the hole transport layer comprises a compound shown in the formula (I). According to the perovskite cell, a compound shown in the formula (I) is adopted as a hole transport layer material, the compound shown in the formula (I) is a polymer, a polymeric monomer of the compound takes indolo [3, 2-b] carbazole as a core, and a fluorine-substituted benzothiadiazole group and a phosphonic acid group are introduced, so that defects in a perovskite light absorption layer can be passivated, an interface electron recombination phenomenon is inhibited, and the performance of the perovskite cell is improved. And the perovskite cell has relatively good photoelectric conversion efficiency.

The invention provides an organic electroluminescent device, and belongs to the technical field of organic electroluminescence. According to the organic light-emitting device provided by the invention, the hole transmission region comprises a structure shown in a formula I, and the electron transmission region comprises a structure shown in a formula II, so that the diffusion of electrons / holes transmitted to the light-emitting layer to the hole / electron transmission region can be effectively blocked, and the probability that the holes and the electrons in the light-emitting layer are compounded into excitons is increased; the injection efficiency of carriers (holes and electrons) among interfaces of all the layers is improved, transmission of the carriers among all the layers is balanced, and therefore the light-emitting efficiency of the organic light-emitting device is improved, and the service life of the organic light-emitting device is prolonged. The method has good application effect and industrialization prospect, and can be widely applied to the fields of display devices, lighting devices, solar cells, portable or mobile terminals, navigation terminals, game machines, TVs, computer displays and the like.

The invention discloses an optical-electric in-situ collaborative polishing device and a diamond polishing method, and aims to improve the polishing rate of diamonds.The device comprises a polishing head module, a polishing disc module, an electric field module, a polishing solution module and a driving and control module, and an ultraviolet light assembly is arranged in the polishing head module; ultraviolet light emitted by the ultraviolet light source can penetrate through the high-light-transmission suction cup, in-situ and global irradiation is conducted on a polishing contact area during polishing, polishing liquid is excited to generate strong oxidizing substances, the positive electrode of the electric field module is connected with the polishing head module, and the negative electrode of the electric field module is connected with the polishing disc module, so that a stable electric field is constructed in the polishing contact area. The polishing liquid is excited to generate strong oxidizing substances, meanwhile, the strong oxidizing substances are effectively inhibited from being compounded with electrons, the diamond is polished by utilizing the device and the matched polishing liquid, the high-concentration strong oxidizing substances are continuously generated and maintained by regulating and controlling the photo-electric in-situ synergistic effect, meanwhile, chemical bonds of the diamond are weakened, and the polishing effect is improved. Therefore, the polishing rate of the diamond is improved.

The invention relates to the technical field of organic electroluminescence, in particular to an organic electroluminescence device. A hole transport region of the organic light-emitting device provided by the invention contains the compound as shown in the formula 1, the organic light-emitting device has high hole mobility and appropriate HOMO energy level, the migration rate of holes in the device is increased, an electron transport region contains the compound as shown in the formula 2, and the hole mobility of the organic light-emitting device is increased. According to the organic light-emitting device, diffusion of holes transmitted to the light-emitting layer to an electron transmission area can be effectively blocked, so that the probability that the holes and electrons are compounded into excitons is increased, the injection efficiency of carriers among interfaces of all layers is improved, the light-emitting efficiency of the organic light-emitting device is greatly improved, and the service life of the organic light-emitting device is greatly prolonged. The compound shown in the formula 1 and the compound shown in the formula 2 show excellent performance when used in an organic electroluminescent device in a matched mode, have good application effects and industrialization prospects and can be applied to multiple fields such as display, illumination, business and medicine.

The invention provides a laminated solar cell, a photovoltaic system, a power generation device and a power utilization device. The laminated solar cell comprises a first electrode, a first light absorption layer, a first charge extraction layer, an upper conversion layer, a second charge extraction layer, a second light absorption layer and a second electrode which are sequentially laminated along a first direction; one of the first charge extraction layer and the second charge extraction layer is a hole transport layer, and the other one is an electron transport layer; the upconversion layer includes an upconversion material. In the laminated solar cell, holes and electrons extracted by the first charge extraction layer and the second charge extraction layer can be compounded in the upper conversion layer, energy generated by compounding of the holes and the electrons can be accumulated in the upper conversion layer under the action of the upper conversion material, and finally photons with energy higher than that of the holes and the electrons are radiated. Photons generated by radiation of the upper conversion layer can be absorbed again by the first light absorption layer and the second light absorption layer, and then the light current of the laminated solar cell is increased.