Quantum dot light emitting diode and preparation method thereof

Abstract

The invention discloses a quantum dot light emitting diode and a preparation method thereof. The quantum dot light emitting diode comprises a substrate, an anode, a hole transport layer, a quantum dot light emitting layer, an electron transport layer and a cathode in sequence from bottom to top, wherein the materials of the quantum dot light emitting layer include quantum dots and an amorphous insulating compound. The quantum dot light emitting layer is prepared by forming a film through spin coating of solution of the amorphous insulating compound containing the quantum dots, in order to weaken the electric field intensity at the quantum dot light emitting layer. Therefore, the possibility of electron recombination is improved while the electron and hole injection barriers are reduced, and thus, the efficiency and service life of QLED devices are increased effectively.

Description

technical field [0001] The invention relates to the technical field of quantum dot light emitting diodes, in particular to a quantum dot light emitting diode and a preparation method thereof. Background technique [0002] Luminescent quantum dots are expected to become the next generation of new display materials due to their high fluorescence intensity and good color purity. When evaluating the relevant parameters of red, green and blue electroluminescent quantum dots, they are all based on QLED devices. The direct evaluation parameters include brightness, current efficiency, and external quantum efficiency. However, for the QLED device itself, the most direct factor affecting these parameters is the electron (e - ) and holes (h + ) Whether the injection in the light-emitting layer is balanced, such as electrons (e - ) and holes (h + ) recombination probability, electron (e - ) and holes (h + ) injection barrier. [0003] In QLED devices, in order to reduce the injec...

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Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a quantum dot light-emitting diode and a preparation method thereof, aiming at solving the problem that when the efficiency of the existing device is high, the lighting voltage of the device increases, resulting in the injection of electrons and holes. The problem that the potential barrier increases and the recombination rate of electrons and holes decreases

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