37results about How to "Increase light absorption intensity" patented technology

The invention discloses a titanium dioxide / graphene / molecularly imprinted composite material and a preparation method and application thereof. According to the composite material, bisphenol A serves as template molecules, a titanium dioxide / graphene composite material serves as an imprinting carrier, o-phenylenediamine serves as functional monomers, a polymerization reaction is carried out under photo-initiation, a molecularly imprinted polymer is formed, and the titanium dioxide / graphene / molecularly imprinted composite material is prepared after the template molecules in the molecularly imprinted polymer are washed out. The titanium dioxide / graphene / molecularly imprinted composite material has a small energy gap, high visible light region light absorption intensity, higher affinity and recognition capacity and higher catalytic capacity, can be widely used for removing bisphenol A in water, can selectively adsorb and efficiently and catalytically degrade the target pollutant bisphenol A, has the advantages of being easy and convenient to operate, high in treatment efficiency, wide in application range, free of toxic effects on the environment and the like, and has wide application prospects in the field of treatment of environmental pollution.

An optical device includes an active layer that includes at least two outer barriers and at least one coupled quantum well that is inserted between the at least two outer barriers. Each coupled quantum well includes at least three quantum well layers and at least two coupling barriers that are respectively provided between the at least three quantum well layers. Thicknesses of two quantum well layers disposed at opposite end portions of the at least three quantum well layers are less than a thickness of the other quantum well layer disposed between the two quantum well layers disposed at the opposite end portions. A bandgap of the two quantum well layers disposed at the opposite end portions may be higher than a bandgap of the other quantum well layer disposed between the two quantum well layers.

The invention discloses an application of silver halide composite materials in preparing carbon dioxide into hydrocarbon under visible-light catalysis. The silver halide composite materials are composed of AgX and conductive carriers, such as graphite (GP), expanded graphite (EGP), graphene oxide (GO), carbon nanotube (CNT), granular activated carbon (GAC), zeolite, TiO2 and the like, thus forming AgX / flake graphite, AgX / EGP, AgX / graphene, AgX / CNT, AgX / GAC, AgX / zeolite and AgX / TiO2 and the like. The invention also discloses a method for preparing the silver halide composite materials, in which the AgX is evenly dispersed on the carrier surfaces with the aid of cationic surfactant by wet co-precipitation. The silver halide composite materials provided by the invention can efficiently utilize the sunlight, wherein the AgX is excitated under the visible light, and electrons generated are transferred from an AgX conduction band to the conductive-carrier surfaces, thus improving catalytic activity and stability of the silver halide composite materials under visible light.

The invention discloses a titanium dioxide / graphene / molecularly imprinted composite material and a preparation method and application thereof. According to the composite material, bisphenol A serves as template molecules, a titanium dioxide / graphene composite material serves as an imprinting carrier, o-phenylenediamine serves as functional monomers, a polymerization reaction is carried out under photo-initiation, a molecularly imprinted polymer is formed, and the titanium dioxide / graphene / molecularly imprinted composite material is prepared after the template molecules in the molecularly imprinted polymer are washed out. The titanium dioxide / graphene / molecularly imprinted composite material has a small energy gap, high visible light region light absorption intensity, higher affinity and recognition capacity and higher catalytic capacity, can be widely used for removing bisphenol A in water, can selectively adsorb and efficiently and catalytically degrade the target pollutant bisphenol A, has the advantages of being easy and convenient to operate, high in treatment efficiency, wide in application range, free of toxic effects on the environment and the like, and has wide application prospects in the field of treatment of environmental pollution.

The invention discloses a preparation method of a rare earth complex doped silica microsphere solution and a modified solar cell. The preparation method of the rare earth complex doped silica microsphere solution comprises the following steps: (1) Two kinds of organic conjugated small molecules are used as the first ligand and the second ligand respectively, and the first ligand and the second ligand are mixed with the rare earth chloride solution to obtain the rare earth complex solution; (2) in the rare earth complex Silicate is added dropwise into the product solution for reaction to obtain a solution of rare earth complex doped silica microspheres. The preparation method of the modified solar cell comprises spin-coating the rare earth complex doped silica microsphere solution on the PET substrate of the solar cell to prepare a modified solar cell with the rare earth complex doped silica microsphere . Utilize the fluorescence characteristics of rare earth complexes and the characteristics of increased scattering of silicon dioxide to increase the light absorption intensity of solar cells and improve the photoelectric conversion efficiency of solar cells.

The invention relates to a graphene / double-layer tellurene / borane Van der Waals heterojunction photodiode device which is composed of single-layer graphene, double-layer tellurene and single-layer borane. wherein in the horizontal direction D, the double-layer tellurene is composed of an m1 section, an m2 section and an m3 section from left to right, and the single-layer borane is composed of an n1 section, an n2 section and an n3 section from left to right; the single-layer graphene and the m1 section form a left electrode region, the m2 section, the m3 section, the n1 section and the n2 section form a central scattering region, and the n3 section forms a right electrode region; the single-layer graphene is vertically stacked on the m1 section along the horizontal direction D to form a graphene / double-layer tellurene Van der Waals heterojunction; and the m3 section is vertically stacked on the n1 section along the horizontal direction D to form the double-layer tellurene / borane Van der Waals heterojunction. According to the invention, the transverse Schottky barrier between the left electrode and the central scattering interval is regulated and controlled by utilizing the lattice orientation of the double-layer tellurene and the direction of the horizontally applied electric field, the rectification effect of the photodiode is enhanced, and the heterojunction photodiode which is simple and efficient and has high light detection rate and high light responsivity is obtained.

The invention discloses nanoparticles with an AIAE (aggregation-induced absorption enhancement) phenomenon as well as synthesis and an application of the nanoparticles and relates to nanoparticles. The nanoparticles with the AIAE phenomenon comprise inner cores and outer layers, wherein the inner cores are croconaine analogues, the outer layers are protein particles, the inner cores are loaded ininner cavities of the outer layers, and composite nanostructures with the croconaine analogues as the inner cores and the protein particles as the outer layers are formed. Hepatitis B core protein particles are diluted and added to a depolymerization buffer solution to be stirred; dye is uniformly stirred in DMSO, and croconaine analogue dye is obtained; the croconaine analogue dye is added to anobtained mixture and stirred, and a mixed liquid is obtained; the mixed liquid is added to a dialysis bag, dialysis is performed in an assembling buffer solution 1, and a magnetic stirring reaction isperformed; the mixed liquid is added to the dialysis bag, dialysis is performed in an assembling buffer solution 2, and a magnetic stirring reaction is performed to obtain medicine-carrying protein nanoparticles; the obtained medicine-carrying protein nanoparticles are subjected to <125>I labeling, and the nanoparticles with the AIAE phenomenon are obtained.

The invention relates to an infrared photoelectric detector based on a cobalt-doped lanthanum ferric cobaltate nano-film and a manufacturing method thereof, and belongs to the technical field of inorganic semiconductor photoelectric detectors. The perovskite solar cell is composed of an interdigital electrode and a perovskite nano-film coated on the interdigital electrode, and the perovskite nano-film is obtained by taking LaFeO3 perovskite nanocrystals as a matrix material and doping Fe sites of the LaFeO3 perovskite nanocrystals with cobalt ions. The perovskite light detector prepared by adopting the preparation method has the advantages of simple structure, simple preparation process, low production cost, no need of expensive instruments and equipment and the like. According to the thin film sensitive material obtained by doping lanthanum ferrite with cobalt ions, the light absorption intensity of LaFeO3 in an infrared region is greatly improved, the electrical property of perovskite is improved, surface defects are reduced, and the carrier mobility is improved.

The invention relates to a graphene / double-layer tellurene / borene van der Waals heterojunction photodiode device, which is composed of single-layer graphene, double-layer tellurene and single-layer borophene; From left to right, it consists of m1 segment, m2 segment and m3 segment. From left to right, single-layer boronene consists of n1 segment, n2 segment and n3 segment; single-layer graphene and m1 segment form the left electrode area, and m2 segment and m3 segment , n1 and n2 segments constitute the central scattering region, and n3 segment constitutes the right electrode region; the single-layer graphene is vertically stacked on the m1 segment along the horizontal direction D to form a graphene / double-layer tellurene van der Waals heterojunction; the m3 segment is along the horizontal direction D stacking vertically on the n1 segment forms a bilayer tellurene / borene van der Waals heterojunction. The invention utilizes the lattice orientation of the double-layer tellurene and the direction of the horizontally applied electric field to regulate the lateral Schottky potential barrier between the left electrode and the center scattering region, enhance the rectification effect of the photodiode, and obtain a simple and efficient device with both high light detection rate and high light detection rate. Heterojunction photodiodes with high photoresponsivity.

The invention relates to a Cu-doped double perovskite material and a preparation method thereof. The chemical formula of the Cu-doped double perovskite material is Cs 2 (Ag 1‑x Bi 1‑x Cu 2x )Br 6 , 0<x<0.25.

The invention relates to a method for coating surface of black phosphor nano particles with mesoporous silica, which belongs to the fields of biomedicine and a nano material. preparing the black phosphor nano particles; placing the prepared black phosphor nano particles in a shaking table, oscillating the shaking table while adding a proper amount of TEOS (ethyl orthosilicate), repeating the above step after half hour; after a reaction is completed, performing centrifugation cleaning, discharging a supernatant, and re-dispersing the black phosphor nano particles coated with silica in ultra pure water, the black phosphor nano particles coated with silica can effectively alleviate the easy agglomeration characteristic of black phosphor, and the silica for coating the black phosphor nano particles is used for acoustic imaging, drug loading, and biological imaging.

The invention discloses a Ti-doped CdIn 2 S 4 The intermediate zone film and its preparation method, the preparation method first cleans the soda lime glass substrate, and then CdIn 2 S 4 Target and TiS 2 The targets are respectively installed on the target positions of the magnetron sputtering apparatus, and then the cleaned soda-lime glass substrate is fixed on the stage, vacuumized, and then CdIn is sputtered alternately in sequence. 2 S 4 and TiS 2 , depositing Ti‑CdIn on soda-lime glass substrate 2 S 4 Obtain a laminated film, and finally put the laminated film into an annealing furnace for annealing, and finally obtain Ti-CdIn 2 S 4 Film in the middle. Ti-doped CdIn of the present invention 2 S 4 The preparation method of the middle zone thin film, the Ti-CdIn of pure spinel structure is prepared by sputtering method 2 S 4 Thin films, doped with Ti elements to form impurity bands, this film can absorb photons in the range of visible light-infrared light sources, increase photogenerated carriers and reduce electron-hole pair recombination, and the light absorption intensity is significantly enhanced, and with the Ti doping amount The increase in absorption strength is also enhanced.

The invention belongs to the technical field of photoelectric catalytic oxidation of semiconductors, and in particular relates to a preparation method, product and application of a bismuth molybdate photoelectrode modified by a cetyltrimethylammonium bromide assisted hydrothermal method. First prepare bismuth molybdate powder with CTAB added by hydrothermal method, then add polyethylene glycol and a little ethanol in turn to make a suspension with good viscosity, then evenly scrape and coat it on FTO conductive glass, and dry it in an oven , and then placed in a muffle furnace for high-temperature roasting to obtain a CTAB-modified bismuth molybdate photoelectrode. Bi prepared by adding surfactant of the present invention 2 MoO 6 From the original granular shape to smaller and thinner nano-sheets, the photoelectrode band gap width will be 2.23eV if it is 2.57eV, and the photocurrent will be about 0.029μA / cm 2 , which is 1.5 times stronger than that without surfactant. The experiment of degrading methylene blue shows that the degradation efficiency of the improved photoelectrode is increased by 26%.

The invention discloses a patterned composite film preparation method for reinforcing photo-absorption of a titanium dioxide film. The method comprises the following steps: preparing a TiO2 nano-film on a glass substrate by using Ti(SO4)2 and H2O2 as precursor solutions; preparing a patterned self-assembled monomolecular film on the surface of the TiO2 nano-film by utilizing an ultraviolet photoetching technology; and selectively depositing Cu2S nano-crystal, and preparing the patterned Cu2S nano-film with complete pattern, clear boundary and compact structure on the surface of the TiO2 nano-film by utilizing a chemical bath method. The patterned Cu2S nano-film is used as a light absorption layer, and the TiO2 nano-film is used as an electron injecting layer to form p-n heterojunction of a patterned micro-structure Cu2S / TiO2 composite film, so the light absorption strength of the TiO2 nano-film can be effectively improved, the wavelength range of light absorption is enlarged, and the solar energy absorption efficiency of the film is further improved, thus the patterned composite film has wide application range in the fields of solar cells, photoswitches, photoelectric conversion, optical storage and the like.

The invention discloses a gallium nitride series CIGS device for artificial photosynthesis and a preparation method thereof. The device includes a TCO layer, a ZnO layer, a CdS layer, a CIGS layer, a Mo layer, an In layer, a GaN layer, an n+-GaN layer, and a sapphire layer sequentially from bottom to top. The preparation steps are as follows: place a GaN film on a clean glass sheet, place In particles evenly on the surface of the GaN film, after placing, place a CIGS solar cell on the surface of the In particles, press it flat, put a clean glass dish on the surface, and put It is put into a vacuum drying oven, evacuated, heated for a period of time, and cooled to room temperature to obtain a gallium nitride series CIGS device. Compared with Si-based GaN devices, the device of the present invention is energy-saving and environment-friendly, and has a simple process. Using the present invention as an anode for photosynthesis has the advantages of high photocurrent density and high cathode potential, and has a strong light absorption coefficient, which is beneficial to solve the development and utilization of new energy and the protection of CO 2 governance of environmental issues.

The present invention is a method for CO 2 Reduced photocatalyst and preparation method thereof, photocatalyst of the present invention is made of g-C 3 N 4 It is prepared by high-temperature calcination and partial oxidation after compounding with transition metal carbides. It has "Z" type carrier transport characteristics, and the formed "Z" type heterojunction reduces the hole-electron recombination rate, and the oxidation reaction and reduction on the catalyst Reactions are separated, thereby enhancing the photocatalytic CO 2 Reduction efficiency and stability. The photothermal effect caused by the large specific surface area of ​​the catalyst and its strong light absorption intensity improves the photocatalytic activity, and the products such as CO are easily desorbed on the surface, which is conducive to the reuse of active sites and enhances the stability of the photocatalyst. . The catalyst of the present invention is in the photocatalytic CO 2 The reduction field has good application prospects, its raw materials are relatively cheap, its preparation method and operation are simple, and it is suitable for large-scale production.