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2results about How to "Increase light absorption intensity" patented technology

Preparation method of Cu / PDI composite material

The application discloses a preparation method of Cu / PDI composite material, which comprises the following steps: step 1, 0.3993g Cu(CH3COO)2.H2O is added into 21mL DMF aqueous solution with a volume fraction of 14%-100%, and stirring is conducted to completely dissolve the Cu(CH3COO)2.H2O, so as to obtain solution A; step 2, 1g PVP is added into the solution A, initial stirring is conducted, then 3.993-35.937mg PDI is added, and continuous stirring is conducted, so as to obtain solution B; and step 3, the solution B is transferred into a polytetrafluoroethylene reaction kettle, the reaction kettle is placed into a drying box, reaction is carried out at 140-180 DEG C for 5-8h, the reaction kettle is cooled to room temperature, and the product C is collected, and then washing and vacuum drying are sequentially conducted, so as to obtain the Cu / PDI composite material, the near-infrared light absorption intensity of the Cu / PDI composite material is enhanced, and the Cu / PDI composite material has excellent photocatalytic activity.
Owner:SHAANXI UNIV OF SCI & TECH

Optische Vorrichtung mit dreifach gekoppelter Quantentopfstruktur

UndeterminedAT1922962TIncrease light absorption intensityIncrease the driving voltage
An optical device includes an active layer that includes at least two outer barriers and at least one coupled quantum well that is inserted between the at least two outer barriers. Each coupled quantum well includes at least three quantum well layers and at least two coupling barriers that are respectively provided between the at least three quantum well layers. Thicknesses of two quantum well layers disposed at opposite end portions of the at least three quantum well layers are less than a thickness of the other quantum well layer disposed between the two quantum well layers disposed at the opposite end portions. A bandgap of the two quantum well layers disposed at the opposite end portions may be higher than a bandgap of the other quantum well layer disposed between the two quantum well layers.
Owner:SAMSUNG ELECTRONICS CO LTD +1