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A device for artificial photosynthesis gallium nitride series cigs and its preparation method

A technology of artificial photosynthesis and gallium nitride, which is applied in the direction of electrolytic components, chemical industry, sustainable manufacturing/processing, etc., can solve the problems of low photocurrent, weak light absorption, and degradation of device performance in the system, so as to reduce accumulation and improve Photoelectric conversion efficiency, effect of improving electron transfer efficiency

Active Publication Date: 2022-03-22
HEBEI UNIV OF TECH
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  • Application Information

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Problems solved by technology

In 2015, Japan's Panasonic Corporation prepared a photovoltaic chemical cell with an InGaN / Si tandem structure, but there are still various problems in this photovoltaic chemical cell, such as the low photocurrent of the system, weak light absorption, and the gap between GaN / Si. Larger interface reflection will lead to a decrease in device performance

Method used

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  • A device for artificial photosynthesis gallium nitride series cigs and its preparation method
  • A device for artificial photosynthesis gallium nitride series cigs and its preparation method
  • A device for artificial photosynthesis gallium nitride series cigs and its preparation method

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preparation example Construction

[0024] Examples of its preparation methods are figure 2 shown, including the following steps:

[0025] In the first step, the surface of the glass sheet is cleaned with ethanol, and a gallium nitride unit is placed on the cleaned glass sheet; part of the GaN layer is etched in the GaN unit to partially expose the lower n+-GaN layer;

[0026] In the second step, evenly place In particles on the n+-GaN layer exposed in the gallium nitride unit;

[0027] The third step is to place a CIGS solar cell on the surface of the In particles, make the In particles contact with the Mo layer, and after pressing and flattening, put a cleaned glass dish on the surface to obtain a gallium nitride serial CIGS device to be heated;

[0028] The fourth step is to put the gallium nitride series CIGS device to be heated into the vacuum drying oven DZ-1BCⅡ, vacuumize, and heat it. The heating temperature is 165 ° C ~ 185 ° C, and the heating time is 1 ~ 2 hours;

[0029] The fifth step is to cool ...

Embodiment 1

[0031] 1) Using H-type electrolytic cells in artificial photosynthesis, the two chambers are separated by a cation exchange membrane;

[0032] 2) Use 1mol L -1 NaOH solution as anolyte, 0.5mol L -1 KCl as the catholyte in the system;

[0033] 3) using the GaN / CIGS tandem device of the present invention as the anode, and the In electrode as the cathode; as Figure 4 shown;

[0034] 4) A 400W UV lamp is used as a lighting source for artificial photosynthesis.

[0035] 5) Analyze CO by gas chromatography 2 The product of reduction; the result of which is image 3 As shown, it can be seen that GaN semiconductor tandem CIGS solar cell thin film is more effective than single GaN semiconductor in artificial photosynthesis CO 2The concentration of reduction products CO and hydrocarbons increased significantly. We experimentally measured the reduction product CO Faradaic efficiency of the device of the present invention to be 10%, while the GaN / Si device reported in the literatu...

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Abstract

The invention discloses a gallium nitride series CIGS device for artificial photosynthesis and a preparation method thereof. The device includes a TCO layer, a ZnO layer, a CdS layer, a CIGS layer, a Mo layer, an In layer, a GaN layer, an n+-GaN layer, and a sapphire layer sequentially from bottom to top. The preparation steps are as follows: place a GaN film on a clean glass sheet, place In particles evenly on the surface of the GaN film, after placing, place a CIGS solar cell on the surface of the In particles, press it flat, put a clean glass dish on the surface, and put It is put into a vacuum drying oven, evacuated, heated for a period of time, and cooled to room temperature to obtain a gallium nitride series CIGS device. Compared with Si-based GaN devices, the device of the present invention is energy-saving and environment-friendly, and has a simple process. Using the present invention as an anode for photosynthesis has the advantages of high photocurrent density and high cathode potential, and has a strong light absorption coefficient, which is beneficial to solve the development and utilization of new energy and the protection of CO 2 governance of environmental issues.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and relates to a semiconductor device for artificial photosynthesis, in particular to a GaN series CIGS device for artificial photosynthesis and a preparation method thereof. Background technique [0002] With the development of the times, the energy crisis and environmental pollution have increasingly become important factors restricting economic development. 2 A large amount of emissions will cause the greenhouse effect, climate abnormality, species diversity reduction, affect human health, and cause environmental and energy problems. Therefore, to solve CO 2 Emissions and other related issues have reached the point of no delay. [0003] Photosynthesis is a process of converting light energy into chemical energy and storing it in organic matter. It is the basis for the survival of the biological world and an important medium for the earth's carbon-oxygen balance. In the initial...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25B11/042C25B1/23C25B1/55C25B3/26C25B3/03C25B3/21
CPCC25B11/04C25B1/00Y02P20/10
Inventor 陈贵锋李寰张辉刘靳恬解新建赵雅婕
Owner HEBEI UNIV OF TECH
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