Infrared photoelectric detector based on cobalt-doped lanthanum ferric cobaltate nano-film and manufacturing method thereof

A nano-film, electrical detector technology, applied in chemical instruments and methods, circuits, cobalt compounds, etc., can solve the problems of weak light absorption, poor conductivity, and cumbersome preparation steps.

Active Publication Date: 2021-07-30
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Currently commercially available near-infrared photodetectors are usually silicon-based photodetectors that can only respond to infrared light with a wavelength shorter than 1100nm
Moreover, these photodetectors usually have complex device structures and cumbersome preparation steps, which make them expensive and limit their applications; while traditional metal oxide electron transport materials have poor conductivity, many defects, and relatively weak light absorption capabilities.

Method used

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  • Infrared photoelectric detector based on cobalt-doped lanthanum ferric cobaltate nano-film and manufacturing method thereof
  • Infrared photoelectric detector based on cobalt-doped lanthanum ferric cobaltate nano-film and manufacturing method thereof
  • Infrared photoelectric detector based on cobalt-doped lanthanum ferric cobaltate nano-film and manufacturing method thereof

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preparation example Construction

[0039] The preparation method of the infrared photodetector based on the cobalt ion-doped lanthanum iron cobaltate nanocrystal of the present invention, the steps are as follows:

[0040] (1) Preparation of lanthanum ferrite perovskite nano film material

[0041] Preparation of lanthanum ferrite nanomaterials by hydrothermal method: at room temperature, first weigh 0.5 mol of lanthanum nitrate hexahydrate and 0.5 mol of ferric nitrate nonahydrate and dissolve them in 10-20 ml of deionized water to form a mixed solution, and stir magnetically at room temperature for 5 ~7min to fully dissolve; then weigh citric acid in another beaker and dissolve it fully with 10~20ml deionized water, drop the obtained citric acid solution into the mixed solution of lanthanum nitrate hexahydrate and ferric nitrate nonahydrate , after magnetic stirring for 30 minutes, a yellow transparent solution was obtained; the yellow solution was placed in an ultrasonic cleaner for continuous cleaning for 30...

Embodiment

[0050] The preparation of the infrared photodetector based on cobalt ion-doped lanthanum iron cobaltate nanocrystals of the present invention first synthesizes cobalt ion-doped iron lanthanum cobaltate perovskite nanomaterials by a sol-gel method, including the following steps:

[0051] Step (1), preparation of lanthanum ferrite perovskite nano film material

[0052] Preparation of lanthanum ferrite nanomaterials by hydrothermal method: at room temperature, first weigh 0.5 mol of lanthanum nitrate hexahydrate and 0.5 mol of ferric nitrate nonahydrate and dissolve them in 10-20 ml of deionized water to form a mixed solution, and stir magnetically at room temperature for 5 ~7min to fully dissolve; then weigh citric acid in another beaker and dissolve it fully with 10~20ml deionized water, drop the obtained citric acid solution into the mixed solution of lanthanum nitrate hexahydrate and ferric nitrate nonahydrate , after magnetic stirring for 30 minutes, a yellow transparent sol...

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Abstract

The invention relates to an infrared photoelectric detector based on a cobalt-doped lanthanum ferric cobaltate nano-film and a manufacturing method thereof, and belongs to the technical field of inorganic semiconductor photoelectric detectors. The perovskite solar cell is composed of an interdigital electrode and a perovskite nano-film coated on the interdigital electrode, and the perovskite nano-film is obtained by taking LaFeO3 perovskite nanocrystals as a matrix material and doping Fe sites of the LaFeO3 perovskite nanocrystals with cobalt ions. The perovskite light detector prepared by adopting the preparation method has the advantages of simple structure, simple preparation process, low production cost, no need of expensive instruments and equipment and the like. According to the thin film sensitive material obtained by doping lanthanum ferrite with cobalt ions, the light absorption intensity of LaFeO3 in an infrared region is greatly improved, the electrical property of perovskite is improved, surface defects are reduced, and the carrier mobility is improved.

Description

technical field [0001] The invention relates to the technical field of inorganic semiconductor photodetectors, in particular to an infrared photodetector based on a cobalt-doped lanthanum iron cobaltate nano-film and a preparation method thereof. Background technique [0002] Sunlight can be divided into three bands, ultraviolet, visible, and infrared; the band from 0.75 to 1000 µm is the infrared band. Among them, 780-2526nm is the near-infrared band. In the civilian field, it is used in communications, medical imaging, environmental and weather monitoring, etc.; in the military, infrared photodetectors play an irreplaceable role in military reconnaissance, mid-night vision, and infrared guidance. [0003] Infrared light detector is an important optoelectronic device that realizes perception and detection through photoelectric signal conversion. Photoelectric detection mainly completes the detection through the following steps: first, the detector generates photogenerated ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/107H01L31/0224H01L31/032H01L31/18C01G51/00
CPCH01L31/107H01L31/022408H01L31/032H01L31/0321H01L31/18C01G51/70C01P2002/72C01P2004/04Y02P70/50
Inventor 仲志成景昭君
Owner JILIN UNIV
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