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A ti-doped cdin 2 the s 4 Intermediate zone film and preparation method thereof

A ti-cdin2s4, thin film preparation technology, applied in metal material coating process, vacuum evaporation plating, coating and other directions, to achieve uniform size distribution, improve light absorption intensity, and enhance the effect of photocurrent

Active Publication Date: 2022-02-01
鄂尔多斯应用技术学院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, no one has given Ti-doped matrix semiconductor CdIn from the actual preparation and parameter methods. 2 S 4 The method of intermediate zone film is disclosed

Method used

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  • A ti-doped cdin <sub>2</sub> the s <sub>4</sub> Intermediate zone film and preparation method thereof
  • A ti-doped cdin <sub>2</sub> the s <sub>4</sub> Intermediate zone film and preparation method thereof
  • A ti-doped cdin <sub>2</sub> the s <sub>4</sub> Intermediate zone film and preparation method thereof

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Experimental program
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Embodiment 1

[0053] see figure 1 , a Ti-doped CdIn of this embodiment 2 S 4 The preparation method of intermediate zone film, its method step is as follows:

[0054] Step 1: Preparation of CdIn 2 S 4 Target: choose a circular target with a diameter of 65mm, a purity of 99.99%, and a thickness of 5mm.

[0055] Step 2: Preparation of TiS 2 Target material; select TiS with a thickness of 3mm and a purity of 99.99% 2 .

[0056] Step 3: Clean the soda-lime glass substrate, first cut the soda-lime glass substrate into 2cm×2cm, clean the surface dirt and debris with detergent, then ultrasonically use deionized water for 20min, and then soak in 10% dilute sulfuric acid After 20 minutes, take out the soda-lime glass substrate and clean it with deionized water; put the cleaned soda-lime glass substrate into carbon tetrachloride, acetone, and absolute ethanol in turn for 10 minutes; finally put the soda-lime glass substrate completed by ultrasonic Put the bottom into absolute ethanol for late...

Embodiment 2

[0064] For the preparation process, please refer to figure 1 , a Ti-doped CdIn of this embodiment 2 S 4 The preparation method of the intermediate zone film, its method steps and embodiment 1 are basically the same, the difference is that in step 4 Ti-CdIn 2 S 4 Fabrication of intermediate zone films, sputtering CdIn 2 S 4 A total of 6 layers, each layer sputtering time 10min, TiS 2 There are 5 layers in total, and the sputtering time for each layer is 1.5min; it is used as a prefabricated laminated film sample labeled T-CIS2.

Embodiment 3

[0066] For the preparation process, please refer to figure 1 , a Ti-doped CdIn of this embodiment 2 S 4 The preparation method of the intermediate zone film, its method steps and embodiment 1 are basically the same, the difference is that in step 4 Ti-CdIn 2 S 4 Fabrication of intermediate zone films, sputtering CdIn 2 S 4 A total of 6 layers, each layer sputtering time 10min, TiS 2 A total of 5 layers, each sputtering time 2.5min. As a prefabricated laminated film sample of the designation T-CIS3.

[0067] On the basis of the above examples, the sputtering method was used to prepare CdIn 2 S 4 A prefabricated film with a total of 6 layers, and the sputtering time of each layer is 11 minutes; it is used as a comparison film sample.

[0068] For the obtained Ti-CdIn 2 S 4 The middle zone film is analyzed by X-ray diffractometer (hereinafter referred to as: XRD), and the crystallinity and crystal structure of the film sample are characterized and qualitatively analyze...

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Abstract

The invention discloses a Ti-doped CdIn 2 S 4 The intermediate zone film and its preparation method, the preparation method first cleans the soda lime glass substrate, and then CdIn 2 S 4 Target and TiS 2 The targets are respectively installed on the target positions of the magnetron sputtering apparatus, and then the cleaned soda-lime glass substrate is fixed on the stage, vacuumized, and then CdIn is sputtered alternately in sequence. 2 S 4 and TiS 2 , depositing Ti‑CdIn on soda-lime glass substrate 2 S 4 Obtain a laminated film, and finally put the laminated film into an annealing furnace for annealing, and finally obtain Ti-CdIn 2 S 4 Film in the middle. Ti-doped CdIn of the present invention 2 S 4 The preparation method of the middle zone thin film, the Ti-CdIn of pure spinel structure is prepared by sputtering method 2 S 4 Thin films, doped with Ti elements to form impurity bands, this film can absorb photons in the range of visible light-infrared light sources, increase photogenerated carriers and reduce electron-hole pair recombination, and the light absorption intensity is significantly enhanced, and with the Ti doping amount The increase in absorption strength is also enhanced.

Description

technical field [0001] The invention relates to an intermediate band absorbing layer material in the field of solar cells, specifically a TiS 2 doped CdIn 2 S 4 Intermediate zone film and its preparation method. Background technique [0002] CdIn with octahedral structure 2 S 4 Spinel semiconductors can be used in the fields of luminescence, optoelectronics, X-ray dosimetry, photoconductors, photocatalysis, solar cells and light-emitting diodes, especially in the field of photocatalysis. Its photoelectric performance can be achieved by introducing impurity bands ( Hereinafter referred to as IB) and improved. CdIn 2 S 4 The optical bandgap value is between 2.0-2.2eV, which is in the optimal bandgap range for realizing IB materials, so it is also one of the promising matrix materials for IBSC light-absorbing layers. [0003] In the prior art, the research team only theoretically doped CdIn with spinel structure with Ti element 2 S 4 According to the analysis of the m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/58C23C14/06C23C14/02
CPCC23C14/352C23C14/0623C23C14/5806C23C14/021
Inventor 范文亮姚海燕吕笑公
Owner 鄂尔多斯应用技术学院
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