The application discloses a CSAMT full-area
apparent resistivity-depth profile generation method. The horizontal position and vertical position of a recording point are taken as the assignment points of the
apparent resistivity; in the far zone, the recording point is located at the detection depth directly below the measuring point; in the
middle zone, the
radius of the wave front is linearly reduced with the decrease of the induction number, the recording point is located at the intersection of the wave front and the detection depth to the source point straight line and approaches the source point from the measuring point with the decrease of the induction number; in the near zone, with the continuous decrease of the induction number, the horizontal position of the recording point approaches the midpoint of the
offset distance from the vicinity of the source point, and the vertical position approaches a certain fixed value proportional to the
offset distance from the vicinity below the source point, and the fixed value is equal to the
offset distance divided by the critical value of the far zone and the
middle zone. The application provides a new, simple, fast method for separating the plane and non-
plane wave, eliminating and utilizing the field source
copying and
shadow effect, and improves the interpretation effect of the
apparent resistivity-depth profile.