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Graphene/double-layer tellurene/borane Van der Waals heterojunction photodiode device

A photodiode and heterojunction technology, applied in electrical components, semiconductor devices, circuits, etc., can solve the problem of inability to combine high light detection rate and high light responsivity, and achieve the effect of enhancing rectification effect and enhancing light absorption intensity.

Active Publication Date: 2021-09-28
JIAXING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the above-mentioned problems in the prior art, the present invention provides a double-layer tellurene / borene van der Waals heterojunction photodiode device structure with both high photodetection rate and high photoresponsivity, which solves the problem that photodiode devices in the prior art cannot combine Problems with high photodetectivity and high photoresponsivity

Method used

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  • Graphene/double-layer tellurene/borane Van der Waals heterojunction photodiode device
  • Graphene/double-layer tellurene/borane Van der Waals heterojunction photodiode device
  • Graphene/double-layer tellurene/borane Van der Waals heterojunction photodiode device

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Embodiment 1

[0054] A graphene / double-layer tellurene / borane van der Waals heterojunction photodiode device with a vacuum layer thickness of Such as figure 1 As shown in (b) and 10, it is composed of single-layer graphene 1, double-layer tellurene 2 and single-layer boronene 4; the structure of double-layer tellurene belongs to the α crystal form, and its lattice orientation is [010] crystal direction;

[0055] The horizontal electric field c-direction coplanar with the bilayer tellurene (the horizontal electric field c-direction is the direction of the electric field applied horizontally along the z direction of the coordinate axis of the Van der Waals heterostructure cell) is the horizontal direction D, along the horizontal direction D, The double-layer tellurene is composed of m1 segment, m2 segment and m3 segment from left to right, and the single-layer boronene is composed of n1 segment, n2 segment and n3 segment from left to right; single-layer graphene and m1 segment constitute th...

Embodiment 2

[0060] A graphene / double-layer tellurene / borane van der Waals heterojunction photodiode device with a vacuum layer thickness of Such as Figure 11 As shown, it is composed of single-layer graphene 1, double-layer tellurene 2 and single-layer boronene 4; the structure of double-layer tellurene belongs to the α crystal form, and its lattice orientation is [010] crystal direction;

[0061] The horizontal electric field a-direction coplanar with the bilayer tellurene (the horizontal electric field a-direction is the direction of the electric field applied horizontally along the x direction of the coordinate axis of the Van der Waals heterostructure cell) is the horizontal direction D, along the horizontal direction D, The double-layer tellurene is composed of m1 segment, m2 segment and m3 segment from left to right, and the single-layer boronene is composed of n1 segment, n2 segment and n3 segment from left to right; single-layer graphene and m1 segment constitute the left electr...

Embodiment 3

[0066] A graphene / double-layer tellurene / borane van der Waals heterojunction photodiode device with a vacuum layer thickness of Such as figure 1 As shown in (c) and 12, it is composed of single-layer graphene 1, double-layer tellurene 2 and single-layer boronene 4; the structure of double-layer tellurene belongs to the α crystal form, and its lattice orientation is [100] crystal direction;

[0067] The horizontal electric field c-direction coplanar with the bilayer tellurene (the horizontal electric field c-direction is the direction of the electric field applied horizontally along the z direction of the coordinate axis of the Van der Waals heterostructure cell) is the horizontal direction D, along the horizontal direction D, The double-layer tellurene is composed of m1 segment, m2 segment and m3 segment from left to right, and the single-layer boronene is composed of n1 segment, n2 segment and n3 segment from left to right; single-layer graphene and m1 segment constitute th...

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Abstract

The invention relates to a graphene / double-layer tellurene / borane Van der Waals heterojunction photodiode device which is composed of single-layer graphene, double-layer tellurene and single-layer borane. wherein in the horizontal direction D, the double-layer tellurene is composed of an m1 section, an m2 section and an m3 section from left to right, and the single-layer borane is composed of an n1 section, an n2 section and an n3 section from left to right; the single-layer graphene and the m1 section form a left electrode region, the m2 section, the m3 section, the n1 section and the n2 section form a central scattering region, and the n3 section forms a right electrode region; the single-layer graphene is vertically stacked on the m1 section along the horizontal direction D to form a graphene / double-layer tellurene Van der Waals heterojunction; and the m3 section is vertically stacked on the n1 section along the horizontal direction D to form the double-layer tellurene / borane Van der Waals heterojunction. According to the invention, the transverse Schottky barrier between the left electrode and the central scattering interval is regulated and controlled by utilizing the lattice orientation of the double-layer tellurene and the direction of the horizontally applied electric field, the rectification effect of the photodiode is enhanced, and the heterojunction photodiode which is simple and efficient and has high light detection rate and high light responsivity is obtained.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a photodiode device structure that utilizes structural anisotropy to improve a double-layer tellurene / borene van der Waals heterojunction with high light detection rate and high light responsivity. Background technique [0002] The increasing miniaturization of next-generation electro-optoelectronic devices coupled with the requirement to overcome short-channel effects necessitates the exploration of novel device structures. Taking two-dimensional van der Waals heterojunction as an example, van der Waals integration is to physically assemble the synthesized structural units together through van der Waals interactions, providing people with a low-energy integration method that is not affected by the crystal lattice and process. limit. The optoelectronic properties of two-dimensional materials can be tuned through van der Waals integration, making van der Waals heterojuncti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/0296H01L31/028H01L31/0256
CPCH01L31/0352H01L31/035272H01L31/0256H01L31/0296H01L31/028H01L2031/0344Y02P70/50
Inventor 贺园园程娜赵健伟
Owner JIAXING UNIV
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