A glass-based high-isolation three-dimensional duplexer
A high isolation, duplexer technology, applied in waveguide-type devices, circuits, electrical components, etc., can solve the problem of frequency selectivity and wide stopband characteristics of duplexers, little research on duplexers, large losses, etc. To eliminate the eddy current effect, improve the frequency selectivity and wide stopband characteristics, and improve the quality factor
Active Publication Date: 2021-11-26
XIDIAN UNIV
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Problems solved by technology
[0004] However, at present, the implementation of duplexers is mainly based on traditional processes, such as Through Silicon Via (TSV for short). Due to the eddy current effect generated by the semiconductor silicon substrate under high frequency conditions, it will bring large losses and seriously affect The frequency selectivity and wide stopband characteristics of the duplexer, but there is little research on the duplexer based on the TVG process
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Embodiment 1
[0034] In order to further reduce the specific contact resistivity of ohmic contact, reduce unnecessary power consumption and signal loss caused by ohmic contact, and improve device performance, please refer to figure 1 , figure 1 It is a schematic front view of the structure of a glass-based high-isolation three-dimensional duplexer provided by an embodiment of the present invention. This embodiment provides a glass-based high-isolation three-dimensional duplexer. The glass-based high-isolation three-dimensional duplexer includes:
[0035] Including from top to bottom: first metal layer 1, first dielectric layer 2, second metal layer 3, bonding layer 7, third metal layer 4, second dielectric layer 5, fourth metal layer 6, wherein, The bonding layer 7 and the third metal layer 4 are located in the middle between the second metal layer 3 and the second dielectric layer 5, and the adhesive layer 10 is located on both sides of the bonding layer 7 and the third metal layer 4 and ...
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Abstract
The invention discloses a glass-based high-isolation three-dimensional duplexer, which includes from top to bottom: a first metal layer, a first dielectric layer, a second metal layer, a bonding layer, a third metal layer, and a second dielectric layer. layer, the fourth metal layer, wherein the bonding layer and the third metal layer are located in the middle between the second metal layer and the second dielectric layer, and the adhesive layer is located on both sides of the bonding layer and the third metal layer and is located on the between the second metal layer and the second dielectric layer. The glass-based high-isolation three-dimensional duplexer proposed by the present invention uses a glass substrate instead of a silicon substrate to make a three-dimensional passive device. Since the relative dielectric constant of glass is much smaller than that of a silicon substrate, a glass substrate is used instead of a silicon substrate to make a three-dimensional passive device. The source device can eliminate the eddy current effect in the high-frequency circuit, significantly reduce the high-frequency loss of the passive device, significantly reduce the power consumption of the duplexer of this embodiment, improve the quality factor of the duplexer, and thereby improve the duplexer. The frequency selectivity and wide stopband characteristics of the device.
Description
technical field [0001] The invention belongs to the technical field of integrated circuit manufacturing and packaging, and in particular relates to a glass-based high-isolation three-dimensional duplexer. Background technique [0002] The slowdown of Moore's Law and the diversified development of integrated circuit applications are two important characteristics of the current integrated circuit industry. With the rise of smart phones, Internet of Things, automotive electronics, high-performance computing, 5G and artificial intelligence , especially in the 5G field (5G millimeter wave (28-60GHz), 5G Sub-6GHz, 5G Internet of Things (Sub-1GHz)), high-speed, high-frequency, and application requirements for heterogeneous integration of various devices require advanced packaging technology to continue Innovation and development. [0003] As an advanced system integration technology, the 2.5D integration technology of interposer based on through-silicon vias can realize high-densi...
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IPC IPC(8): H01P1/20H01P1/208H01P1/213
CPCH01P1/20H01P1/208H01P1/2138
Inventor 刘晓贤朱樟明刘诺刘阳卢启军尹湘坤杨银堂
Owner XIDIAN UNIV