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Semiconductor device heat dissipation structure

A heat dissipation structure and semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., can solve problems such as the influence of IGBT module terminals, and achieve a high-safety and practical solution that eliminates adverse effects. Effect

Active Publication Date: 2021-02-02
DONGFENG MOTOR CORP HUBEI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention provides a heat dissipation structure of a semiconductor device, which is used to solve the technical problem that it is easy to cause adverse effects on the IGBT module terminal when screwing the bolt connecting the busbar to the IGBT module

Method used

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  • Semiconductor device heat dissipation structure
  • Semiconductor device heat dissipation structure
  • Semiconductor device heat dissipation structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] This embodiment provides a heat dissipation structure for a semiconductor device, which is used to solve the technical problem that when the bolts connecting the busbars to the IGBT module are unscrewed, it is easy to cause adverse effects on the terminals of the IGBT module.

[0041] The heat dissipation structure of the semiconductor device includes a main body, which is provided with an interlayer 3 and a cavity, the interlayer 3 is used to wrap the IGBT module 2, and the terminal 201 of the installed IGBT module 2 protrudes from the top of the main body, and the cavity is used In this way, when the interlayer 3 is wrapped with the IGBT module 2 and the cavity is filled with cooling liquid, by means of the heat conduction of the wall between the interlayer 3 and the cavity, the IGBT module can 2 The heat generated by the operation is transferred to the cooling liquid, thereby dissipating heat from the IGBT module 2, and also transferring the cold energy of the cooling...

Embodiment 2

[0046]This embodiment is further improved on the basis of Embodiment 1. In the semiconductor device heat dissipation structure provided by this embodiment, a boss 7 is provided on the side wall of the main body. The top of the boss 7 is a plane, and the busbar 5 is connected to On the upper surface of the boss 7, in this way, the boss 7 can support the busbar 5, and, because the boss 7 is connected to the side wall of the main body, the heat generated by the busbar 5 is conducted through the boss 7 and the main body. And the cooling liquid that reaches the above-mentioned cavity performs heat exchange, and the cooling liquid can also perform heat dissipation and cooling on the busbar 5 to cool the busbar 5, effectively solving the problem of heat dissipation of the busbar 5, thereby preventing the temperature of the busbar 5 from being too high As a result, the temperature rise in the internal space of the controller is too large to affect the IGBT module 2. Therefore, the heat...

Embodiment 3

[0050] This embodiment serves as an implementation of the above-mentioned embodiment. In the semiconductor device heat dissipation structure provided by this embodiment, the above-mentioned main body includes several composite boards 1, and several composite boards 1 are overlapped and connected together. A layer of the above-mentioned interlayer 3 is formed between the boards 1. It should be noted that the number of IGBT modules 2 that can be wrapped in each interlayer 3 can be changed by setting the length of the composite board 1. Optimally, in each interlayer 3 is provided with three clamping positions, and each clamping position can clamp one IGBT module 2, that is, three IGBT modules 2 can be clamped in each interlayer 3, and the three clamping positions are distributed at equal intervals.

[0051] A chamber 103 is provided inside each composite board 1 , and when all the composite boards 1 are overlapped and connected together, all the chambers 103 communicate to form th...

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Abstract

The invention relates to a semiconductor device heat dissipation structure, which belongs to the technical field of heat dissipation structures, and is used for solving the technical problem that adverse effects are easily caused to a wiring terminal of an IGBT module when a bolt for connecting a busbar to the IGBT module is screwed. The semiconductor device heat dissipation structure comprises amain body and partition plates, a cavity used for being filled with cooling liquid and an interlayer used for wrapping an IGBT module are arranged in the main body, a wiring terminal of the IGBT module extends out of the top end of the main body, the top end of the main body is connected with a plurality of partition plates, a wire groove is formed between every two adjacent partition plates, anda busbar connected to the IGBT module is laid in each wire groove. And the partition plate is arranged between the busbar and the wiring terminal. Through the above structure, the partition plate separates the wiring terminal of the IGBT module from the busbar, and when a bolt connecting the busbar to the IGBT module is screwed, the partition plate protects the wiring terminal, so that adverse effects on the wiring terminal of the IGBT module caused by operation of screwing the bolt can be reduced or eliminated.

Description

technical field [0001] The invention belongs to the technical field of heat dissipation structures, and in particular relates to a heat dissipation structure of a semiconductor device. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor), an insulated gate bipolar transistor, is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), the traditional IGBT The module only has one side for heat dissipation, and the heat dissipation efficiency is not high. Therefore, an IGBT module with double-side heat dissipation appears in the prior art. However, no matter the IGBT module with single-side heat dissipation or double-side heat dissipation needs to be attached to the heat dissipation structure for heat dissipation. [0003] When in use, the electronic components in the controller are electrically connected to the IGBT module through the busbar, and the busbar ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/367H01L23/473H01L23/32H01L29/739
CPCH01L23/3672H01L23/473H01L23/32H01L29/7393
Inventor 霍达胡磊郭俊徐刚周坤
Owner DONGFENG MOTOR CORP HUBEI
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