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ADC intrinsic noise analysis method for CMOS image sensor

An image sensor, inherent noise technology, applied in the field of simulation analysis

Active Publication Date: 2021-02-26
XIAN MICROELECTRONICS TECH INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The object of the present invention is to overcome the shortcoming that the inherent noise of the ADC used for CMOS image sensors cannot be obtained, and a kind of ADC inherent noise analysis method for CMOS image sensors is provided

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  • ADC intrinsic noise analysis method for CMOS image sensor
  • ADC intrinsic noise analysis method for CMOS image sensor
  • ADC intrinsic noise analysis method for CMOS image sensor

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Embodiment Construction

[0034] In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only It is an embodiment of a part of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0035] It should be noted that the terms "first" and "second" in the description and claims of the present invention and the above drawings are used to distinguish similar objects, but not necessarily used to describe a specific sequence or sequence. It is to be understood that the data so used are interchangeable under appropriate circ...

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Abstract

The invention discloses an ADC intrinsic noise analysis method for a CMOS image sensor, and belongs to the field of simulation analysis. An ADC intrinsic noise analysis method for a CMOS image sensorcomprises the following steps: 1) performing simulation analysis on the inversion of an ADC comparator to obtain inversion interval offset; 2) calculating the probability that the inversion interval offset is distributed in one clock period of the ADC counter and the probability that the inversion interval offset spans a plurality of clock periods, and calculating the noise voltage of the CMOS image sensor caused accordingly; and 3) multiplying the noise voltage of the CMOS image sensor by the corresponding probability to obtain a calculated value of the noise of the CMOS image sensor caused by the intrinsic noise of the ADC. According to the analysis method, the overall noise of the CMOS image sensor caused by ADC intrinsic noise is determined, whether the design value meets the design requirement or not can be determined in the design stage, and a basis is provided for noise design improvement.

Description

technical field [0001] The invention belongs to the field of simulation analysis, in particular to an ADC inherent noise analysis method for a CMOS image sensor. Background technique [0002] In low-brightness scenes or video applications, noise seriously affects the quality of captured images or videos. Noise broadly refers to disturbances in other forms than signals. There are many types of noise in CMOS sensor circuits, which can be roughly divided into device electronic noise and "environmental" noise according to the cause of its generation. The electronic noise of the device is caused by the physical properties of the device itself. In CMOS visible light image sensors, it generally includes thermal noise, shot noise, flicker noise, and dark current; Low-level random interference, or environmental temperature changes, clock jitter, electromagnetic interference, etc. Various noises are coupled to the sensor array through peripheral circuits to damage image sensor perf...

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Application Information

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IPC IPC(8): H04N17/00
CPCH04N17/002
Inventor 李婷何杰崔双韬张先娆徐晚成张曼曹天骄袁昕李倩敏时光
Owner XIAN MICROELECTRONICS TECH INST
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