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Integrated Memory

A memory cell, charge storage technology, applied in semiconductor devices, electrical solid state devices, electrical components, etc., can solve problems such as memory dissipation and refresh

Pending Publication Date: 2021-03-05
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Volatile memory is dissipative and therefore needs to be refreshed / rewritten, sometimes many times per second

Method used

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Examples

Experimental program
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Embodiment Construction

[0018] Some embodiments incorporate the recognition that body regions associated with some types of memory cells may be "floating," and thus may be isolated from a source of carriers. During programming operations, this can become a problem because the limiting factor for the speed of programming operations can be the rate at which carriers are refreshed within the body region. Some embodiments may include heterostructure active regions that enable band-to-band tunneling during carrier replenishment to thereby improve performance (eg, increase programming speed). Some embodiments may include structures coupling the body region with a storage region for charge carriers. refer to Figure 1 to 1 0 describes an example embodiment.

[0019] As a forewarning, it should be noted that some of the figures show various different dopant levels, and some or all of the designations p+, p, p-, n-, n, and n+ are utilized to distinguish the levels. The difference in dopant concentration be...

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PUM

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Abstract

The embodiment of the invention relates to an integrated memory. Some embodiments include an assembly having a memory cell with an active region which includes a body region between a pair of source / drain regions. A charge-storage material is adjacent to the body region. A conductive gate is adjacent to the charge-storage material. A hole-recharge arrangement is configured to replenish holes within the body region during injection of holes from the body region to the charge-storage material. The hole-recharge arrangement includes a heterostructure active region having at least one source / drainregion of a different composition than the body region, and / or includes an extension coupling the body region with a hole-reservoir. A wordline is coupled with the conductive gate. A first comparative digit line is coupled with one of the source / drain regions, and a second comparative digit line is coupled with the other of the source / drain regions.

Description

technical field [0001] Integrated memory. Background technique [0002] Memory is a type of integrated circuit and is used in computer systems to store data. Memory can be fabricated as one or more arrays of individual memory cells. Digit lines (which may also be referred to as bit lines, data lines, sense lines, or data / sense lines) and access lines (which may also be referred to as word lines) can be used to write to or read from memory cells. Digit lines can conductively interconnect the memory cells along the columns of the array, and access lines can conductively interconnect the memory cells along the rows of the array. [0003] Memory cells can be volatile or nonvolatile. Nonvolatile memory cells store data for extended periods, including when the computer is turned off. Volatile memory is dissipative and therefore needs to be refreshed / rewritten, sometimes multiple times per second. Regardless, memory cells are configured to hold or store memory in at least two ...

Claims

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Application Information

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IPC IPC(8): H01L27/11568H01L27/11573H01L27/11521H01L27/11526
CPCH10B41/40H10B41/30H10B43/40H10B43/30H10B41/27H10B43/27
Inventor K·M·考尔道A·法鲁辛刘海涛K·D·普拉尔
Owner MICRON TECH INC