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A kind of preparation method and application of antimony sulfur selenium film with v-type energy band structure

An energy band structure, thin film technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, climate sustainability, etc., can solve problems such as open circuit voltage and short circuit current limitation of antimony sulfur selenium solar cells, and achieve low surface roughness. , The film surface is smooth and the effect of improving efficiency

Active Publication Date: 2022-05-31
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Aiming at the defects and improvement needs of the prior art, the present invention provides a preparation method and application of an antimony-sulfur-selenide thin film with a V-shaped energy band structure, and its purpose is to solve the problem of open-circuit voltage and short-circuit current of the existing antimony-sulfur-selenide solar cells. Mutually restrictive technical issues

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  • A kind of preparation method and application of antimony sulfur selenium film with v-type energy band structure
  • A kind of preparation method and application of antimony sulfur selenium film with v-type energy band structure
  • A kind of preparation method and application of antimony sulfur selenium film with v-type energy band structure

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preparation example Construction

[0048] The present invention adopts the chemical water bath deposition method to deposit and prepare the antimony sulfur selenide film with V-type energy band structure in three steps.

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Abstract

The invention discloses a method for preparing an antimony-sulfur-selenium thin film with a V-shaped energy band structure and its application, and belongs to the technical field of photoelectric materials and thin films. The method includes: mixing antimony potassium tartrate, sodium thiosulfate, and selenourea to obtain a precursor Body solution; deposition in three steps, by adjusting the amount of selenourea added in each step, and satisfying that the selenourea content in the second step is greater than that in the first and third steps, the reaction is carried out in a water bath, and the antimony sulfur selenium precursor is obtained after drying Bulk film; the antimony sulfur selenium precursor film is annealed, because the atomic ratio of S and Se in the second layer of precursor film obtained by deposition is smaller than that of the first layer and the third layer, that is, the band gap of the second layer of precursor film is smaller than that of the first layer One layer and the third layer, so that the antimony sulfur selenium thin film with V-type energy band structure can be finally obtained. In this way, the solar cell made of the antimony sulfur selenide thin film with V-shaped energy band structure can realize synergistic improvement of open circuit voltage and short circuit current to obtain higher photoelectric conversion efficiency.

Description

A kind of preparation method and application of antimony sulfur selenide thin film with V-type energy band structure technical field The invention belongs to the technical field of optoelectronic materials and thin films, and more particularly, relates to a kind of antimony with V-type energy band structure Preparation method and application of sulfur-selenium thin film. Background technique Thin-film photovoltaics are widely used in flexible devices and building-integrated photovoltaics, where CdTe and CuInGaSe 2 is a typical representative. However, the toxicity of Cd and the scarcity of Te, In, and Ga partially limit their applications. Therefore, exploring the abundance of elements on the earth And non-toxic photovoltaic materials are imminent. Antimony-based chalcogenides include antimony sulfide (Sb 2 S 3 ), antimony selenide (Sb 2 Se 3 ) and it Our alloy antimony sulfur selenide (Sb 2 (S,Se) 3 ) has been extensively studied in rec...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0296H01L31/042H01L31/18H01L31/0216
CPCH01L31/02966H01L31/1828H01L31/042H01L31/02167Y02E10/543
Inventor 唐江卢岳陈超鲁帅成李康华李森
Owner HUAZHONG UNIV OF SCI & TECH