A Metal-Organic Decomposition Growth Method of Metastable Phase Rare Earth Nickel Oxide Thin Films

Abstract

A metal-organic decomposition growth method for a metastable phase rare earth nickel oxide thin film. It is characterized in that organic acid salts such as rare earth hydroxy acids and nickel hydroxy acids are dissolved in a single benzene ring aromatic organic solvent as a precursor, spin-coated on the substrate and annealed under high oxygen pressure to achieve a metastable phase Non-vacuum growth of metastable rare-earth nickel-based oxide thin-film materials with structure and apparent metal-insulator phase transition properties. The viscosity of the precursor can be adjusted through the number of carbon atoms of the carbon branched functional group of the precursor, the spatial configuration, the ratio of the solute to the solvent, etc., so as to control the growth characteristics such as the deposition thickness and growth uniformity of the film. The method is easy to operate and low in cost, and can realize the large-size, large-thickness, and high-uniformity growth of metastable-phase rare-earth nickel-based oxide film materials with different rare-earth elements. The prepared film has multiple electronic phase transition characteristics, and can be applied to thermistors, fuel cell proton conductors, biomass detection, ocean weak electric field detection, strong correlation logic electronic devices, and the like.

Description

technical field [0001] The invention belongs to the field of electronic materials, and in particular relates to a technical method for growing a rare earth nickel oxide film material with a thermodynamic metastable phase twisted perovskite structure by a metal organic decomposition method. The method can greatly improve the deposition uniformity and deposition thickness of the metastable phase thin film, has simple and low cost of operation, and does not need a vacuum process. The prepared film has the characteristics of metal-insulator phase transition under temperature triggering, and can be applied to sudden change thermistors, negative temperature coefficient thermistors, laser weapon protection, strongly correlated logic devices, atmosphere sensors, thermochromic windows, etc. Background technique [0002] Metastable phase rare earth nickel oxide is a kind of metastable phase metal insulator electronic phase change material with twisted perovskite structure, and its che...

AI Technical Summary

Problems solved by technology

1) Thin films such as samarium-nickel-oxygen and neodymium-nickel-oxygen are deposited on substrates with similar crystal structure and lattice parameters by pulsed laser deposition or metal-organic vapor deposition to make them non-uniform on the lattice template of the substrate Nucleation, thus forming a metastable phase film [APL Mater.2014, 2, 116110]; this type of method relies on the vacuum preparation process, and its technology is relatively complicated and difficult to achieve large-area deposition

2) Use magnetron sputtering and other methods to grow precursors of rare earth, nickel and other elements on silicon substrates, and then trigger the precursors to form rare earth nickel-based oxide metastable phase twisted perovskite through solid-state reaction under high oxygen pressure Structure [Nat.Commun.,2013,4,2676]; this kind of method also relies on the vacuum process, the cost is high and the process is relatively complicated

3) Use the ethylene glycol methyl ether solution of rare earth nitrate and nickel acetate as the precursor, and apply it on lanthanum aluminate, strontium titanate, etc. that have similar crystal structure and lattice parameters to rare earth nickel-based oxides by means of chemical spin coating. On a single crystal substrate, through the solid-state reaction under high oxygen pressure, the heterogeneous nucleation template effect between the thin film substrates and the high oxygen pressure effect are combined to realize the precursor to the rare earth nickel oxide phase with a metastable phase structure. Transformation [Matter, 2020, 2, 1; Mater. Horiz., 2019, 6, 788]; it is difficult to precisely control the viscosity and other characteristics of the precursor by such methods, so it is difficult to achieve large-thickness and high-uniform deposition growth of the material

[0003] In summary, there is still a lack of an effective non-vacuum, low-cost, large-thickness, and highly uniform growth method for metastable phase rare earth nickel-based oxide thin film materials in this field.

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