Forming method of semiconductor structure

A semiconductor and conversion technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as reduced production capacity

Inactive Publication Date: 2021-03-16
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This results in reduced productivity (throughout)
Thus, while existing integrated circuit (IC) manufacturing pr

Method used

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  • Forming method of semiconductor structure
  • Forming method of semiconductor structure
  • Forming method of semiconductor structure

Examples

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Embodiment Construction

[0048] The following content provides many different embodiments or examples for implementing different components of the embodiments of the present invention. Specific examples of components and configurations are described below to simplify embodiments of the invention. Of course, these are just examples, not intended to limit the embodiments of the present invention. For example, if the description mentions that the first component is formed on the second component, it may include an embodiment where the first and second components are in direct contact, or it may include an additional component formed between the first and second components , such that the first and second components are not in direct contact. In addition, the embodiments of the present invention may repeat element symbols and / or letters in many examples. These repetitions are for the purposes of simplicity and clarity and do not in themselves imply a specific relationship between the various embodiments...

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Abstract

A forming method of a semiconductor structure according to some embodiments of the present disclosure includes providing a workpiece that include an opening and a top surface, depositing a dielectricmaterial over the workpiece and into the opening to form a first dielectric layer that has a top portion over the top surface and a plug portion in the opening, treating the first dielectric layer toconvert top portion into a second dielectric layer different from the first dielectric layer, and selectively removing the second dielectric layer.

Description

technical field [0001] Embodiments of the present invention relate to semiconductor technology, and in particular to a dielectric plug. Background technique [0002] The semiconductor integrated circuit (Integrated Circuit, IC) industry has experienced exponential growth. Technological advances in integrated circuit (IC) materials and design have produced many generations of integrated circuits (ICs), with each generation of integrated circuits (ICs) having smaller and more complex circuits than the previous generation. In the evolution of integrated circuits (ICs), functional density (eg, the number of interconnected devices per chip area) has decreased as geometric size (eg, the smallest component (or line) ) has generally increased. Such miniaturization processes generally provide benefits by increasing production efficiency and reducing associated costs. [0003] This miniaturization has also increased the process and complexity of manufacturing integrated circuits (I...

Claims

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Application Information

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IPC IPC(8): H01L21/762
CPCH01L21/76224H01L21/02321H01L21/02323H01L21/02329H01L21/02337H01L21/0234H01L21/02348H01L21/31055H01L21/31111H01L21/31116H01L21/76819H01L21/76826H01L21/76834H01L21/76837H01L21/02247H01L21/02532H01L21/3003H01L21/31053H01L21/76832
Inventor 颜甫庭陈婷婷彭羽筠林耕竹
Owner TAIWAN SEMICON MFG CO LTD
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