Light-emitting diode and manufacturing method
A technology for light-emitting diodes and a manufacturing method, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problem that light-emitting diodes are not easy to peel off the substrate by laser, and achieve the effects of smooth peeling and improving light extraction efficiency.
Active Publication Date: 2021-09-28
苏州芯聚半导体有限公司
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Problems solved by technology
[0006] The object of the present invention is to provide a light-emitting diode and a manufacturing method, which are used to overcome the problem that the existing light-emitting diodes including Bragg reflectors are not easily peeled off from the substrate by laser
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[0025] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the embodiments and accompanying drawings. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0026] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, or in a specific orientation. construction and operation, therefore, should not be constr...
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The present invention provides a light-emitting diode and a manufacturing method thereof. The manufacturing method includes: S1, providing a substrate; S2, preparing a light-emitting diode on the substrate, and the light-emitting diode includes sequentially stacking on the substrate The epitaxial structure, the ohmic contact layer and the connecting electrode; S3, forming an insulating layer on the surface of the connecting electrode away from the substrate, etching the insulating layer to form a first opening, and the connecting electrode is formed from the first opening exposed in the middle; S4, forming an organic adhesive layer on the surface of the insulating layer away from the substrate, and the organic adhesive layer partially contacts the surface of the substrate; S5, forming a light-absorbing layer on the organic adhesive layer on the surface of the side away from the substrate; and S6, irradiating laser light onto the substrate, so that the organic adhesive layer is separated from the substrate, so that the light emitting diode is peeled off from the substrate .
Description
technical field [0001] The invention belongs to the technical field of semiconductors, and more specifically relates to a light emitting diode and a preparation method thereof. Background technique [0002] In recent years, active light-emitting semiconductor micro LED (Micro Light Emitting Diode, micro LED) chips have developed rapidly as a micro display technology. The application scenarios of micro LED chip display technology cover almost all display fields, such as large commercial display screens, TVs, Mobile phones, car displays, AR and VR, etc. In particular, the micro-LED chip display technology used in micro-displays in the fields of AR and VR has incomparable advantages over other display technologies, such as high brightness and high pixel density beyond the theoretical limits of other micro-display technologies. [0003] Existing micro-LED chip structures include front-mount, flip-chip, and vertical thin-film chips. Considering the difficulty of detection, mass...
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IPC IPC(8): H01L33/44H01L33/00
CPCH01L33/0066H01L33/0075H01L33/44H01L2933/0025
Inventor 李庆韦冬于波顾杨
Owner 苏州芯聚半导体有限公司