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Magnetic tunnel junction structure of magnetic random access memory

A technology of magnetic tunnel junction and random access memory, which is applied in the field of memory and can solve problems such as difficult to meet the requirements of ultra-small MRAM devices

Active Publication Date: 2021-04-09
SHANGHAI CIYU INFORMATION TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The design of the reference layer plus an antiferromagnetic layer can reduce the influence of the leakage magnetic field on the free layer. However, in the current structure, it is still difficult to meet the requirements of the ultra-small MRAM device for the leakage field

Method used

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Embodiment Construction

[0029] The following descriptions of the various embodiments refer to the accompanying drawings to illustrate specific embodiments in which the present invention can be practiced. The directional terms mentioned in the present invention, such as "up", "down", "front", "back", "left", "right", "inside", "outside", "side", etc., are for reference only The orientation of the attached schema. Therefore, the directional terms used are used to illustrate and understand the present invention, but not to limit the present invention.

[0030] The drawings and descriptions are to be regarded as illustrative in nature and not restrictive. In the figures, structurally similar units are denoted by the same reference numerals. In addition, the size and thickness of each component shown in the drawings are arbitrarily shown for understanding and ease of description, but the present invention is not limited thereto.

[0031] In the drawings, for clarity, understanding, and ease of descript...

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Abstract

The invention provides a magnetic tunnel junction structure of a magnetic random access memory. Themagnetic tunnel junction structure comprises a plurality of lattice conversion layers; lattice conversion and strong ferromagnetic coupling between an antiferromagnetic layer with a face-centered cubic crystal structure and a reference layer with a body-centered cubic stacking structure is realized, and the improvement of a magnetic tunnel junction unit is realized in terms of the magnetic property, the electricity and the yield; and the device is miniaturized.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a magnetic tunnel junction structure of a magnetic random access memory. Background technique [0002] Magnetic random access memory (MRAM) in the magnetic tunnel junction (Magnetic tunnel junction; MTJ) with vertical anisotropy (Perpendicular Magnetic Anisotropy; PMA), as a free layer for storing information, has two in the vertical direction The magnetization direction, namely: up and down, corresponds to "0" and "1" or "1" and "0" in binary respectively. In practical applications, when reading information or leaving it blank, the magnetization direction of the free layer will remain unchanged; during the writing process, if a signal different from the existing state is input, the magnetization direction of the free layer will be reversed by 180 degrees in the vertical direction. The ability of the magnetization direction of the free layer of the MRAM to remain unchanged is cal...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L27/22H10N50/10
CPCH10B61/22H10N50/10Y02D10/00
Inventor 张云森郭一民陈峻肖荣福
Owner SHANGHAI CIYU INFORMATION TECH