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Magnetic tunnel junction structure and magnetic random access memory thereof

A magnetic tunnel junction, random storage technology, applied in the field of memory, can solve the problem of difficult to effectively reduce the influence of leakage magnetic field and so on

Pending Publication Date: 2021-09-03
SHANGHAI CIYU INFORMATION TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this design is still difficult to effectively reduce the influence of the leakage magnetic field on the free layer

Method used

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  • Magnetic tunnel junction structure and magnetic random access memory thereof
  • Magnetic tunnel junction structure and magnetic random access memory thereof
  • Magnetic tunnel junction structure and magnetic random access memory thereof

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Embodiment Construction

[0022] Please refer to the drawings in the accompanying drawings, wherein like reference numerals refer to like components. The following description is based on illustrated specific embodiments of the present application, which should not be construed as limiting other specific embodiments of the present application that are not described in detail here.

[0023] The following descriptions of the various embodiments refer to the attached drawings to illustrate specific embodiments that the present application can be implemented in. The directional terms mentioned in this application, such as "up", "down", "front", "rear", "left", "right", "inside", "outside", "side", etc., are for reference only The orientation of the attached schema. Therefore, the directional terms used are used to illustrate and understand the application, but not to limit the application.

[0024] The terms "first", "second", "third", etc. (if any) in the description and claims of this application and t...

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Abstract

The invention provides a magnetic tunnel junction structure and a magnetic random access memory thereof. A ferromagnetic superlattice layer of an antiferromagnetic layer of the magnetic tunnel junction structure is combined with a reference layer to form a double-layer structure with the ultrathin antiferromagnetic layer and the reference layer. The saturation magnetic moments of the antiferromagnetic layer and the reference layer in the vertical direction are adjusted to adjust the leakage magnetic field of the two layers in the free layer, so that the magnetic tunnel junction has relatively good leakage magnetic field writing current regulation and control capability, and the improvement of a magnetic tunnel junction unit in magnetism, electricity and yield and the device miniaturization are facilitated.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a magnetic tunnel junction structure and a magnetic random access memory thereof. Background technique [0002] Magnetic Random Access Memory (MRAM) in the Magnetic Tunnel Junction (Magnetic Tunnel Junction; MTJ) with vertical anisotropy (Perpendicular Magnetic Anisotropy; PMA), as a free layer for storing information, has two in the vertical direction The magnetization direction, namely: up and down, corresponds to "0" and "1" or "1" and "0" in binary respectively. In practical applications, when reading information or leaving it blank, the magnetization direction of the free layer will remain unchanged; during the writing process, if a signal different from the existing state is input, the magnetization direction of the free layer will be reversed by 180 degrees in the vertical direction. The ability of the magnetization direction of the free layer of the magnetic random access...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/10H10N50/10
CPCH10N50/10H10N50/85
Inventor 张云森郭一民肖荣福陈峻
Owner SHANGHAI CIYU INFORMATION TECH CO LTD