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Magnetic tunnel junction structure and magnetic random access memory

A magnetic tunnel junction and random access memory technology, applied in the field of memory, can solve the problems of increasing and reducing the error rate of memory read operation, and achieve the effect of being beneficial to the improvement of magnetics, electricity, yield and thermal stability.

Pending Publication Date: 2021-05-14
SHANGHAI CIYU INFORMATION TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In order to improve the thermal stability factor of ultra-small MRAM unit devices, the effective perpendicular anisotropy energy can be increased by reducing the thickness of the free layer, adding or changing the free layer to a material with low saturation magnetic susceptibility, etc. Density, thereby maintaining a high thermal stability factor, but the tunnel magnetoresistance ratio (Tunnel Magnetoresistance Ratio, TMR) of the magnetic tunnel junction will be reduced, which will increase the error rate of the memory read operation

Method used

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  • Magnetic tunnel junction structure and magnetic random access memory
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  • Magnetic tunnel junction structure and magnetic random access memory

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Embodiment Construction

[0020] Please refer to the drawings in the accompanying drawings, wherein like reference numerals refer to like components. The following description is based on illustrated specific embodiments of the present application, which should not be construed as limiting other specific embodiments of the present application that are not described in detail here.

[0021] The following descriptions of the various embodiments refer to the attached drawings to illustrate specific embodiments that the present application can be implemented in. The directional terms mentioned in this application, such as "up", "down", "front", "rear", "left", "right", "inside", "outside", "side", etc., are for reference only The orientation of the attached schema. Therefore, the directional terms used are used to illustrate and understand the application, but not to limit the application.

[0022] The terms "first", "second", "third", etc. (if any) in the description and claims of this application and t...

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Abstract

The invention provides a magnetic tunnel junction structure and a magnetic random access memory, the magnetic tunnel junction structure comprises a free layer of a multilayer structure, and two perpendicular anisotropy enhancement layers formed by non-magnetic metal and oxide and / or incomplete oxide of the non-magnetic metal are configured among three free sub-layers. Through the arrangement of the two perpendicular anisotropy enhancement layers, two interfaces with strong perpendicular anisotropy are provided for each free layer, so that the thermal stability is improved. And the improvement of magnetics, electrics and yield of the magnetic random access memory and the further miniaturization of the device are facilitated.

Description

technical field [0001] The invention relates to the field of memory technology, in particular to a magnetic tunnel junction structure and a magnetic random access memory. Background technique [0002] Magnetic random access memory (MRAM) in the magnetic tunnel junction (Magnetic tunnel junction; MTJ) with vertical anisotropy (Perpendicular Magnetic Anisotropy; PMA), as a free layer for storing information, has two in the vertical direction The magnetization direction, namely: up and down, corresponds to "0" and "1" or "1" and "0" in binary respectively. In practical applications, when reading information or leaving it blank, the magnetization direction of the free layer will remain unchanged; during the writing process, if a signal different from the existing state is input, the magnetization direction of the free layer will be reversed by 180 degrees in the vertical direction. The ability of the magnetization direction of the free layer of the MRAM to remain unchanged is c...

Claims

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Application Information

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IPC IPC(8): H01L43/02H01L43/08H01L43/10H01L27/22
CPCH10B61/00H10N50/80H10N50/10H10N50/85
Inventor 张云森郭一民陈峻肖荣福
Owner SHANGHAI CIYU INFORMATION TECH
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