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Surface acoustic wave resonator and method for manufacturing surface acoustic wave resonator

A technology of surface acoustic wave and manufacturing method, which is applied in the manufacturing field of surface acoustic wave resonator and temperature-compensated surface acoustic wave resonator, can solve the problem of easily broken fingers and the like, and achieves high Q value, low frequency temperature coefficient, Effect of high electromechanical coupling coefficient

Pending Publication Date: 2021-04-13
GUANGDONG CANCHIP TECH CO LTD
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  • Abstract
  • Description
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Problems solved by technology

However, if the thickness of the interdigital electrode is too small, the resistance of the interdigital electrode will increase sharply, and it is easy to break the finger during the stripping process of the interdigital electrode preparation in the later stage. Therefore, it is necessary to select a suitable SAW resonator structure. The thickness of the interdigitated electrodes

Method used

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  • Surface acoustic wave resonator and method for manufacturing surface acoustic wave resonator
  • Surface acoustic wave resonator and method for manufacturing surface acoustic wave resonator
  • Surface acoustic wave resonator and method for manufacturing surface acoustic wave resonator

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Embodiment approach 1

[0047] [Surface Acoustic Wave Resonators]

[0048] figure 1It is a side view of the structure of the surface acoustic wave resonator according to Embodiment 1 of the present invention. The propagation direction of the surface acoustic wave is the width direction of the electrode fingers (ie figure 1 The left and right direction) is the x-axis, and the thickness direction of the piezoelectric material layer 101 (ie figure 1 The up and down direction in the center) is the z-axis.

[0049] The following combination figure 1 , the structure of the surface acoustic wave resonator of the present invention shown in the figure will be described.

[0050] The surface acoustic wave resonator of the present invention adopts a piezoelectric film structure, and a substrate 105, a third dielectric layer 106, a piezoelectric material layer 101, a first dielectric layer 103, and a second dielectric layer 104 are stacked sequentially from bottom to top, An interdigitated electrode compose...

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Abstract

The surface acoustic wave resonator of the present invention comprises: a substrate; a piezoelectric layer formed on the substrate and having a thickness of 0.8 [mu] m to 1.2 [mu] m; and an interdigital electrode having a plurality of electrode fingers formed in the piezoelectric layer, the thickness of the electrode fingers being 300 nm to 500 nm, and a duty ratio, which is a ratio of a width to a pitch of the electrode fingers, being 0.4 to 0.6.

Description

technical field [0001] The invention relates to a surface acoustic wave resonator and a manufacturing method of the surface acoustic wave resonator. The surface acoustic wave resonator of the invention can be used for filters or mobile phone radio frequency front ends, and the manufacturing method of the invention can be used for surface acoustic wave resonators The technical field of manufacturing resonators and temperature-compensated surface acoustic wave resonators. Background technique [0002] Surface acoustic wave (SAW) filters are widely used in signal receiver front ends as well as duplexers and receive filters. SAW filters combine low insertion loss and good rejection performance to achieve wide bandwidth and small size. In the known SAW filter, the electrical input signal is converted into an acoustic wave by an interleaved metal interdigital transducer (IDT). This IDT electrode is widely used in the excitation and detection of SAW. It is arranged periodically an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/17H03H9/02H03H3/02
CPCH03H9/17H03H9/02H03H3/02
Inventor 许欣宋晓辉翁志坤
Owner GUANGDONG CANCHIP TECH CO LTD
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