How to make a memory
A technology of memory and storage area, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., and can solve problems such as poor memory performance
Active Publication Date: 2022-07-08
CHANGXIN MEMORY TECH INC
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[0005] In view of the above problems, the present invention provides a method for preparing a memory, which is used to solve the problem of poor performance of the memory
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[0081] Dynamic random access memory (DRAM for short) is a semiconductor memory that writes and reads data at high speed and randomly, and is widely used in data storage devices or devices. The dynamic random access memory includes a base and a plurality of isolation walls arranged on the base, and the base and the multiple isolation walls on the base are constituent structures in the dynamic random access memory.
[0082] In some related technologies, a method for preparing an isolation wall on a substrate is: providing a substrate, the substrate includes a storage area, a test area and an alignment area; forming a first isolation layer on the substrate, and the structure formed by these two steps is such as Figure 1a , Figure 2a and Figure 3a As shown, the substrate 100 includes a storage area, a test area and an alignment area, and a first isolation layer 200 is provided on the substrate 100; a first mask layer 300 having a pattern area is formed on the first isolation la...
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The present invention provides a method for preparing a memory, which relates to a semiconductor integrated circuit manufacturing technology and is used to solve the problem of poor performance of the memory. The preparation method of the memory comprises the following steps: providing a substrate; forming a first isolation layer on the substrate; forming a first mask layer on the first isolation layer; forming a first mask layer on the first mask layer and part of the first isolation layer Two isolation layers; forming a second mask layer on the second isolation layer; removing part of the second mask layer and part of the second isolation layer, leaving the top surface of the second isolation layer and the top surface of the first mask layer flushing; removing the first mask layer and the remaining second mask layer; forming a third mask layer on the first isolation layer and the remaining second isolation layer; removing part of the third mask layer; The third mask layer is a mask, and the remaining part of the second isolation layer and the first isolation layer below it are etched. The preparation method of the memory of the present invention is used for preparing the memory with superior performance.
Description
technical field [0001] The present invention relates to a semiconductor integrated circuit manufacturing technology, in particular to a method for preparing a memory. Background technique [0002] Dynamic random access memory (DRAM for short) is a semiconductor memory that writes and reads data at high speed and randomly, and is widely used in data storage devices or devices. [0003] The dynamic random access memory includes a base and a plurality of isolation walls disposed on the base, and the base and the multiple isolation walls on the base are constituent structures in the dynamic random access memory. [0004] However, the above-mentioned isolation wall has structural defects, which may lead to poor performance of the memory. SUMMARY OF THE INVENTION [0005] In view of the above problems, the present invention provides a method for preparing a memory, which is used to solve the problem of poor memory performance. [0006] In order to achieve the above purpose, th...
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IPC IPC(8): H01L21/8242H10B12/00
CPCH10B12/09
Inventor 张家云
Owner CHANGXIN MEMORY TECH INC