Design and fabrication method of a high-power vertical structure ultraviolet LED chip

A LED chip and vertical structure technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of difficulty in adapting to high-power and convenient applications, high manufacturing costs, and low luminous efficiency, and achieve increased single-sided light output efficiency , large band gap, and the effect of reducing dislocation density

Active Publication Date: 2022-02-22
聚瑞芯光电有限公司
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Problems solved by technology

[0004] The object of the present invention is to provide a design and manufacturing method of a high-power vertical structure ultraviolet LED chip, to solve the problem of low luminous efficiency, small size, high preparation cost and difficulty of the existing ultraviolet LED chip proposed in the above-mentioned background technology. The efficiency is low, the heat dissipation performance is poor, and it is difficult to adapt to the problem of high-power and convenient application in the industry

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  • Design and fabrication method of a high-power vertical structure ultraviolet LED chip
  • Design and fabrication method of a high-power vertical structure ultraviolet LED chip
  • Design and fabrication method of a high-power vertical structure ultraviolet LED chip

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[0034] see Figure 1-5 , the present invention provides a technical solution: a design and manufacturing method of a high-power vertical structure ultraviolet LED chip, the design of the high-power vertical structure ultraviolet LED chip is as follows: a sapphire substrate is used as a growth substrate for heteroepitaxial growth, Using MOCVD technology to complete the entire epitaxial process, the sapphire substrate adopts an image substrate, that is, a PSS substrate. This substrate adopts a special design, which is a triangular pyramid structure with a vertex angle of 120°. A thin layer of low-temperature InN is grown on the PSS. Then grow a layer of InGaN, then grow a thin layer of AlGaInN, then grow a layer of high-temperature GaN, then grow a layer of BGaN, then grow a layer of n-type AlGaN, then grow an active layer, an electron blocking layer, and then The growth DBR reflective layer is composed of 10-50 BAlN or BGaN or BN and AlN periodic structure layers, doped with ma...

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Abstract

The disclosure of the invention belongs to the technical field of semiconductor electronic information, and specifically relates to a design and manufacturing method of a high-power vertical structure ultraviolet LED chip. The design of the high-power vertical structure ultraviolet LED chip is as follows: a sapphire substrate is used as a growth Massive epitaxial growth, using MOCVD technology to complete the entire epitaxial process, the sapphire substrate adopts an image substrate, that is, a PSS substrate. Excellent emission efficiency, as well as special surface nanoimprinting and double-layer patterned micro-nano treatment, greatly improve the radiation power and light efficiency of ultraviolet LEDs, improve the current diffusion efficiency and the heat dissipation capacity of the chip, so as to improve the production of the chip The size effectively improves the reliability of violet LED devices, and can be suitable for industrial applications on a large scale.

Description

technical field [0001] The invention relates to the technical field of semiconductor electronic information, in particular to a method for designing and manufacturing a high-power vertical structure ultraviolet LED chip. Background technique [0002] With the advancement of science and technology and the development of new energy sources, solid-state LED lighting will become the trend of lighting in the future world. Due to the advantages of energy saving, environmental protection, safety, long life, low consumption, and low heat, LEDs have been widely used in traffic lights, Traffic lights, landscape decorative lights, display screens, car tail lights, mobile phone backlights, sterilization and other fields. At present, the LEDs on the market are mainly blue-green light, followed by red and yellow light. There are relatively few LED products of purple light and deep ultraviolet light, mainly due to the difficulty in manufacturing high-power deep ultraviolet LEDs and low lum...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/20H01L33/12H01L33/10H01L33/00
CPCH01L33/20H01L33/12H01L33/10H01L33/007
Inventor 王晓波
Owner 聚瑞芯光电有限公司
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