Image sensor and image forming apparatus mounted with same

An image sensor and pixel technology, applied in the field of image sensors, can solve the problems of difficult charge transfer floating diffusion area, affecting image quality, large dark current of storage capacitor, etc.

Inactive Publication Date: 2021-05-14
SZ DJI TECH CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Generally, the storage capacitor is an N-type diffusion region with a low doping concentration. In the charge storage stage, its initial potential should not be too high. Too high initial potential will cause excessive dark current in the storage capacitor; at the same time, in the subsequent signal read During the output process, it is difficult for the charge to be transferred to the floating diffusion region; however, the low initial potential of the storage capacitor will cause the charge in the photodiode to be transferred to the storage capacitor through the transfer tube, and the charge will not be completely transferred to cause the residual charge. Inside the photodiode, affecting the final image quality

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Image sensor and image forming apparatus mounted with same
  • Image sensor and image forming apparatus mounted with same
  • Image sensor and image forming apparatus mounted with same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] The following will clearly and completely describe the technical solutions in the embodiments of this specification with reference to the drawings in the embodiments of this specification. Obviously, the described embodiments are part of the embodiments of this specification, not all of them. Based on the embodiments in this specification, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of this specification.

[0033] The flow charts shown in the drawings are just illustrations, and do not necessarily include all contents and operations / steps, nor must they be performed in the order described. For example, some operations / steps can be decomposed, combined or partly combined, so the actual order of execution may be changed according to the actual situation.

[0034] Some implementations of this specification will be described in detail below with reference to the accompanying drawings. In t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an image sensor and an imaging device carrying the image sensor. Pixels of the image sensor comprise a photosensitive element, a storage capacitor, a floating diffusion region, a first transmission tube, a second transmission tube, a reset circuit and a voltage output circuit. The storage capacitor comprises a grid electrode and a doped region, and the initial potential of the storage capacitor is increased when the grid electrode of the storage capacitor is set to be high level.

Description

technical field [0001] This specification relates to the technical field of image sensors, and in particular to an image sensor and an imaging device equipped with an image sensor. Background technique [0002] Image sensor chips can be classified into rolling shutter (rolling shutter CIS) image sensors and global shutter (global shutter CIS) image sensors according to exposure and corresponding readout methods. The global shutter image sensor includes a photodiode (PD), a storage capacitor (memory node, MN), a floating diffusion region (FD), and the like. Generally, the storage capacitor is an N-type diffusion region with a low doping concentration. In the charge storage stage, its initial potential should not be too high. Too high initial potential will cause excessive dark current in the storage capacitor; at the same time, in the subsequent signal read During the output process, it is difficult for the charge to be transferred to the floating diffusion region; however, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/369H04N5/351H04N5/378H04N5/357
CPCH04N25/50H04N25/60H04N25/70H04N25/75
Inventor 徐泽肖琳周雪梅
Owner SZ DJI TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap