Wafer electroplating device and electroplating method

An electroplating device and wafer technology, applied in the direction of electrodes, circuits, electrolysis process, etc., can solve problems such as uneven thickness of electroplating layer, and achieve the effect of reducing the difficulty of grinding

Inactive Publication Date: 2021-05-25
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology

[0003] The purpose of the present invention is to provide a wafer electroplating device and electroplating method t

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  • Wafer electroplating device and electroplating method
  • Wafer electroplating device and electroplating method
  • Wafer electroplating device and electroplating method

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[0025]Next, the technical solutions in the embodiments of the present invention will be apparent from the embodiment of the present invention, and it is clearly described, and it is understood that the described embodiments are merely embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, those of ordinary skill in the art will belong to the scope of the present invention without all other embodiments obtained without creative labor.

[0026]The plating device of conventional wafer 100 is first described before describing the embodiments of the present invention.

[0027]Seefigure 1 The electroplating device of the conventional wafer 100 includes a plating tank 30, an electroplated anode 40, and a power source 120, and an electroplating groove 30 is provided with a plating solution 70, and a seed layer 20 is provided, and the electroplated anode 40 includes a towant of seed layer 20. The first surface 401, the seed layer 20 inc...

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Abstract

The invention provides a wafer electroplating device and electroplating method. The wafer electroplating device comprises an electroplating bath, an electroplating anode, a virtual anode and a power source. Electroplating liquid is arranged in the electroplating bath, a seed layer is arranged on the surface of a wafer, the electroplating anode comprises a first surface facing the seed layer, the seed layer comprises a second surface facing the electroplating anode, and at least part of the first surface and at least part of the second surface are immersed in the electroplating liquid. The power source comprises a positive electrode and a negative electrode, the electroplating anode is connected to the positive electrode of the power source, the seed layer is connected to the negative electrode of the power source, the virtual anode is immersed in the electroplating liquid and located between the electroplating anode and the seed layer, the virtual anode can enable ions in the electroplating liquid to pass through, and the resistance of the virtual anode is larger than the sum of the resistance of the electroplating liquid and the resistance of the seed layer. The wafer electroplating device and electroplating method solve the technical problem that the thickness of an electroplated layer formed on the wafer through electroplating is not uniform.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a wafer electroplating device and an electroplating method. Background technique [0002] At present, for the electroplating process (ECP) in semiconductors, since the power supply of electroplating is applied to the seed layer on the surface of the wafer, the seed layer on the surface of the wafer has a certain resistance, which makes the different positions of the seed layer Different currents on the seed layer will result in different thicknesses of the electroplating layer formed by electroplating at different positions of the final seed layer, which will increase the difficulty of subsequent grinding of the electroplating layer. Contents of the invention [0003] The object of the present invention is to provide a wafer electroplating device and an electroplating method to solve the technical problem of uneven thickness of the electroplating layer formed by e...

Claims

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Application Information

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IPC IPC(8): C25D17/00C25D7/12C25D17/12C25D3/38
CPCC25D3/38C25D7/12C25D17/001C25D17/12
Inventor 张育龙黄驰曾海王永平
Owner YANGTZE MEMORY TECH CO LTD
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