Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Wafer electroplating device and electroplating method

An electroplating device and wafer technology, applied in the direction of electrodes, circuits, electrolysis process, etc., can solve problems such as uneven thickness of electroplating layer, and achieve the effect of reducing the difficulty of grinding

Inactive Publication Date: 2021-05-25
YANGTZE MEMORY TECH CO LTD
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a wafer electroplating device and electroplating method to solve the technical problem of uneven thickness of the electroplating layer formed by electroplating on the wafer

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wafer electroplating device and electroplating method
  • Wafer electroplating device and electroplating method
  • Wafer electroplating device and electroplating method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0026] Before describing the embodiments of the present invention, a conventional wafer 100 plating apparatus will be described first.

[0027] see figure 1 , the electroplating device of traditional wafer 100 comprises electroplating tank 30, electroplating anode 40 and power supply 120, is provided with electroplating solution 70 in electroplating tank 30, and the surface of wafer 100 is provided with seed layer 20, and electroplating anode 40 includes towards se...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a wafer electroplating device and electroplating method. The wafer electroplating device comprises an electroplating bath, an electroplating anode, a virtual anode and a power source. Electroplating liquid is arranged in the electroplating bath, a seed layer is arranged on the surface of a wafer, the electroplating anode comprises a first surface facing the seed layer, the seed layer comprises a second surface facing the electroplating anode, and at least part of the first surface and at least part of the second surface are immersed in the electroplating liquid. The power source comprises a positive electrode and a negative electrode, the electroplating anode is connected to the positive electrode of the power source, the seed layer is connected to the negative electrode of the power source, the virtual anode is immersed in the electroplating liquid and located between the electroplating anode and the seed layer, the virtual anode can enable ions in the electroplating liquid to pass through, and the resistance of the virtual anode is larger than the sum of the resistance of the electroplating liquid and the resistance of the seed layer. The wafer electroplating device and electroplating method solve the technical problem that the thickness of an electroplated layer formed on the wafer through electroplating is not uniform.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a wafer electroplating device and an electroplating method. Background technique [0002] At present, for the electroplating process (ECP) in semiconductors, since the power supply of electroplating is applied to the seed layer on the surface of the wafer, the seed layer on the surface of the wafer has a certain resistance, which makes the different positions of the seed layer Different currents on the seed layer will result in different thicknesses of the electroplating layer formed by electroplating at different positions of the final seed layer, which will increase the difficulty of subsequent grinding of the electroplating layer. Contents of the invention [0003] The object of the present invention is to provide a wafer electroplating device and an electroplating method to solve the technical problem of uneven thickness of the electroplating layer formed by e...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C25D17/00C25D7/12C25D17/12C25D3/38
CPCC25D3/38C25D7/12C25D17/001C25D17/12
Inventor 张育龙黄驰曾海王永平
Owner YANGTZE MEMORY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com