Group III nitride laminated substrate and semiconductor light-emitting element
A technology for stacking substrates and light-emitting elements, which is applied to semiconductor devices, electrical components, chemical instruments and methods, etc., and can solve problems such as the degradation of GaN layer quality
Pending Publication Date: 2021-05-25
SUMITOMO CHEM CO LTD
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Problems solved by technology
However, there is concern that the quality of the GaN layer, such as crystallinity, will decrease due to the thinning of the GaN layer.
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[0046] A group III nitride multilayer substrate 150 (hereinafter also referred to as a wafer 150 ) and a semiconductor light emitting element 200 (hereinafter also referred to as a light emitting element 200 ) manufactured using the wafer 150 according to one embodiment of the present invention will be described. The wafer 150 is a laminated substrate constituting a light emitting diode (LED).
[0047] figure 1 is an exemplary schematic cross-sectional view of wafer 150 . The wafer 150 includes: a sapphire substrate 10; an AlN layer 20 composed of aluminum nitride (AlN); a GaN layer 30, which is an n-type layer composed of gallium nitride (GaN) to which n-type impurities are added; and a light-emitting layer 41, which is composed of a group III nitride; and a p-type layer 42, which is composed of a group III nitride and added with a p-type impurity. One of the features of the wafer 150 of the present embodiment is that the GaN layer 30 grown on the AlN layer 20 and next to ...
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Abstract
The invention relates to a group III nitride laminated substrate and a semiconductor light-emitting element. Provided is a technique capable of improving the quality of a GaN layer that is formed on a sapphire substrate and is used in a semiconductor light-emitting element. The group III nitride laminated substrate is provided with: a sapphire substrate; a first layer formed on the sapphire substrate and made of aluminum nitride; a second layer, which is an n-type layer formed on the first layer and composed of gallium nitride, to which an n-type impurity is added; a third layer which is a light-emitting layer formed on the second layer and composed of a group III nitride; and a fourth layer which is a p-type layer formed on the third layer and comprising a group III nitride to which a p-type impurity has been added, the thickness of the second layer being 7 [mu]m or less, the half-value width of (0002) diffraction measured on the basis of an X-ray rocking curve being 100 seconds or less, and the half-value width of (10-12) diffraction measured on the basis of an X-ray rocking curve being 200 seconds or less.
Description
technical field [0001] The present invention relates to a group III nitride laminate substrate and a semiconductor light-emitting element. Background technique [0002] A group III nitride multilayer substrate (hereinafter also referred to as a wafer) in which a GaN layer is formed on a base substrate belonging to a dissimilar substrate such as a sapphire substrate is used as a material for manufacturing semiconductor elements such as light emitting diodes (LEDs) (for example, refer to patent Reference 1). As the diameter of wafers increases and the miniaturization of semiconductor elements progresses, for example, the influence of a reduction in lithography accuracy caused by warpage of the wafer is increasing. [0003] A micro LED display has been proposed as a display with lower power consumption and higher image quality in place of a liquid crystal display and an organic EL display. Conventional semiconductor light-emitting elements (LED chips) used for lighting and ot...
Claims
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IPC IPC(8): H01L33/06H01L33/00H01L33/14H01L33/32
CPCH01L33/007H01L33/06H01L33/145H01L33/325H01L33/32H01L33/025H01L33/0075C30B29/406
Inventor 藤仓序章今野泰一郎木村健司
Owner SUMITOMO CHEM CO LTD