IPM reliability test method, device and system and computer storage medium

Abstract

The invention discloses an IPM reliability test method, which comprises the steps of applying a first preset bias voltage to a to-be-tested IPM, obtaining a first leakage current of the IPM and judging whether the IPM fails according to the first leakage current; if yes, setting the test temperature as a first preset temperature and applying a second preset bias voltage; after lasting for a second preset duration, restoring to the normal-temperature static test environment; applying a first preset bias voltage to the IPM to obtain a second leakage current of the IPM; judging whether the IPM fails or not based on the second leakage current and the limit leakage current of the IPM; if yes, setting the test temperature as a second preset temperature, setting the test humidity as a preset humidity, and applying a third preset bias voltage; after lasting for a third preset duration, restoring to the normal-temperature static test environment; after the normal-temperature static test environment is recovered, applying a first preset bias voltage to the IPM to obtain a third leakage current of the IPM; and judging whether the IPM fails or not based on the third leakage current and the limit leakage current of the IPM.

Description

technical field [0001] The invention relates to the field of power semiconductors, in particular to an IPM reliability testing method, device, system and computer storage medium. Background technique [0002] Intelligent Power Module (IPM) is a power drive product that combines power electronics and integrated circuit technology. It integrates power switching devices and high-voltage drive circuits, and has been widely used in industrial control, home appliances and other fields. [0003] Intelligent power modules will be affected by harsh environments in practical applications, especially high temperature, high humidity, and high pressure environments. In order to evaluate the reliability of the intelligent power module, high temperature reverse bias experiment and high temperature and high humidity reverse bias experiment will be carried out to simulate the high temperature, high pressure and high humidity environment encountered by the intelligent power module. [0004] ...

AI Technical Summary

Problems solved by technology

[0005] The main purpose of the present invention is to propose an IPM reliability testing method, aiming at solving the technical problem that the existing intelligent power module reliability evaluation method cannot effectively evaluate it

Images