Semiconductor memory device

Abstract

A semiconductor memory device includes a first chip having a peripheral transistor and a first insulating layer, and includes a second chip having a stacked structure and a second insulating layer. The stacked structure includes conductive patterns and insulating patterns alternately stacked with each other, the first insulating layer includes a first bonding surface, the second insulating layer includes a second bonding surface contacting the first bonding surface, and the second chip further includes a protrusion protruding from the second bonding surface of the second insulating layer toward the first insulating layer.

Description

technical field [0001] Various embodiments relate generally to a semiconductor memory device, and more particularly to a three-dimensional semiconductor memory device. Background technique [0002] A semiconductor memory device may include memory cells capable of storing data. [0003] Depending on data storage and maintenance methods, semiconductor memory devices may be classified into volatile semiconductor memory devices and nonvolatile semiconductor memory devices. Volatile memory devices may lose data when power supply is interrupted, while non-volatile memory devices are capable of retaining stored data even without power supply. [0004] Recently, as the use of portable electronic devices has increased, the use of nonvolatile semiconductor memory devices has increased. Highly integrated semiconductor memory devices are being sought for portability and capacity. Three-dimensional semiconductor memory devices have been proposed to increase integration density. Cont...

AI Technical Summary

Problems solved by technology

Volatile memory devices can lose data when the power supply is interrupted, while non-volatile memory devices are capable of retaining stored data even without power

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