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An ultra-wideband chip bias circuit structure

A bias circuit and ultra-wideband technology, which is applied to amplifiers, electrical components, amplifiers, etc. Performance-enhancing effects

Active Publication Date: 2022-07-29
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In view of the problems existing in the above-mentioned prior art, the present invention proposes an ultra-wideband chip bias circuit structure to solve the problem that the MMIC cannot meet the ultra-wideband requirements due to the limitation of the on-chip decoupling capacitor area

Method used

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  • An ultra-wideband chip bias circuit structure
  • An ultra-wideband chip bias circuit structure
  • An ultra-wideband chip bias circuit structure

Examples

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Embodiment 1

[0044] This embodiment provides an ultra-wideband chip bias circuit structure, including a current source, an equivalent inductor, a microstrip line, a chip decoupling capacitor, and a spiral inductor. One end of the current source is grounded, and the other end is connected in series through an equivalent inductor Microstrip line, one end of the on-chip decoupling capacitor is grounded through the spiral inductor, and the other end is connected to the connection line between the equivalent inductor and the microstrip line.

[0045] This embodiment also provides a single-stage RF power amplifier applying the ultra-wideband chip bias circuit structure, such as figure 1 shown, including source Z S1 , input matching network, stabilization network, transistor, output matching network, load Z L1 , gate bias circuit and drain bias circuit;

[0046] The input matching network includes a first microstrip line MLIN 1 , the second microstrip line MLIN 2 , the first capacitor C 1 an...

Embodiment 2

[0056] This embodiment provides a six-stage distributed amplifier using an ultra-wideband chip bias circuit structure, such as figure 2 shown, including source Z S2 , gate artificial transmission line, stabilization network, first transistor M 1 , the second transistor M 2 , the third transistor M 3 , the fourth transistor M 4 , the fifth transistor M 5 , the sixth transistor M 6 , drain artificial transmission line, load Z L2 , gate bias circuit and drain bias circuit.

[0057] The gate artificial transmission line includes an eighth capacitor C 8 , the fourteenth microstrip line MLIN 14 , the fifteenth microstrip line MLIN 15 , the sixteenth microstrip line MLIN 16 , the seventeenth microstrip line MLIN 17 and the eighteenth microstrip line MLIN 18 ; The eighth capacitor C 8 one end through the signal source Z S1 Ground, the other end goes through the fourteenth microstrip line MLIN 14 , the fifteenth microstrip line MLIN 15 , the sixteenth microstrip line M...

Embodiment 3

[0067] This embodiment provides a two-stage low-noise amplifier using an ultra-wideband chip bias circuit structure, such as image 3 shown, including source Z S3 , load Z L3 , input matching network, first stabilization network, second stabilization network, seventh transistor M 7 , the eighth transistor M 8 , an inter-stage matching network, an output matching network, a first gate bias circuit, a second gate bias circuit, a first drain bias circuit and a second drain bias circuit;

[0068] The input matching network includes an eighteenth capacitor C 18 and the twelfth inductance L 12 ; The eighteenth capacitor C 18 one end is connected to the signal source Z S3 , the other end passes through the twelfth inductor L 12 connected in series to the seventh transistor M 7 the grid;

[0069] The first gate bias circuit includes a first gate current source Vg3, a first gate equivalent inductance L 10 , the nineteenth capacitor C 19 , the first grid spiral inductance L ...

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Abstract

The invention provides an ultra-wideband chip bias circuit structure, belonging to the technical field of radio frequency microwave integrated circuits, comprising a current source, an equivalent inductor, a microstrip line, a chip decoupling capacitor and a spiral inductor. The equivalent inductor is connected in series with the microstrip line, one end of the chip decoupling capacitor is grounded through the spiral inductor, and the other end is connected to the connecting line between the equivalent inductor and the microstrip line; the ultra-wideband chip bias circuit structure can be applied to single-stage RF In power amplifiers, distributed amplifiers and low-noise amplifiers, the ultra-wideband performance of the MMIC using the ultra-wideband chip bias circuit structure is achieved without increasing the area of ​​the MMIC on-chip decoupling capacitor.

Description

technical field [0001] The invention belongs to the technical field of radio frequency microwave integrated circuits, in particular to an ultra-wideband chip bias circuit structure. Background technique [0002] As an important module of wireless system, microwave transceiver front-end components are widely used in radar, communication and other systems. Power amplifier (Power Amplifier, PA), as the last-stage core device of the transmitting chain, plays a crucial role in the working distance of the entire wireless system. Compared with other semiconductor technologies, gallium nitride (GaN) has high saturation migration speed, large band gap, high power density (41.4W / mm@4GHz), high drain breakdown voltage (1900V), and radiation resistance. It has become the first choice for high-frequency and high-power device and system design. [0003] In addition to the inherent advantages of GaN materials, GaN can also form heterojunctions with other compound semiconductors to form H...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03F1/02H03F3/193
CPCH03F1/02H03F3/193
Inventor 徐跃杭林支慷吴韵秋
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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