Atomic layer deposition equipment with multiple furnace tubes

An atomic layer deposition and furnace tube technology, applied in coating, metal material coating process, gaseous chemical plating, etc., can solve the problem of high equipment cost

Pending Publication Date: 2021-06-08
无锡琨圣智能装备股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to overcome the existing defects, provide a multi-furnace atomic layer deposition equipment, and solve the current problem of high equipment cost caused by increasing the number of equipment in order to take into account the uniformity of film deposition and high production capacity

Method used

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  • Atomic layer deposition equipment with multiple furnace tubes

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Experimental program
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Effect test

Embodiment 1

[0018] Such as figure 1 As shown, an atomic layer deposition equipment with multiple furnace tubes includes two furnace tubes 1, the tail end of each furnace tube 1 is connected to a main pipeline 2 through a connecting pipe, and the other end of the main pipeline 2 is connected to a vacuum pump 3.

[0019] working principle:

[0020] The length of each furnace tube is shorter than that of conventional furnace tubes, and the total length of the two furnace tubes is longer than that of conventional furnace tubes. This combination can increase the total amount of silicon wafers inside the process chamber, and the process gas The stroke of the vacuum pump has been reduced, so that the conventional vacuum pump can meet the work requirements, so as to ensure the uniformity of film deposition, increase the production capacity of the equipment, and reduce the cost of the equipment (the cost of vacuum and suction filtration is relatively large).

[0021] Each furnace tube 1 has a do...

Embodiment 2

[0026] The difference between this embodiment and Embodiment 1 is that each connecting pipe is provided with an independent angle valve. When only one furnace tube is working, the independent angle valve of the non-working furnace tube can be closed, or when the length of the two furnace tubes At the same time, the pressure in the process chamber of the two furnace tubes can be controlled separately.

[0027] The invention is an atomic layer deposition equipment with multiple furnace tubes. Each furnace tube shares a set of vacuum system, which ensures the uniformity of thin film deposition, improves the total production capacity of the equipment, and reduces the equipment cost required for the same production capacity configuration.

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Abstract

The invention belongs to the field of vacuum equipment, and provides an atomic layer deposition equipment with multiple furnace tubes. The atomic layer deposition equipment comprises at least two furnace tubes, and the furnace tails of the furnace tubes are jointly connected with a main pipeline through connecting pipes; and the other end of the main pipeline is connected with a vacuum suction device. According to the atomic layer deposition equipment with the multiple furnace tubes, the furnace tubes share one set of vacuum system, so that the total productivity of the equipment is improved while the film deposition uniformity is ensured, and the equipment cost required for the configuration with the same productivity is reduced.

Description

technical field [0001] The invention relates to an atomic layer deposition equipment, in particular to an atomic layer deposition equipment with multiple furnace tubes. Background technique [0002] In the preparation process of crystalline silicon batteries and some electronic devices, various thin film materials need to be deposited on substrates such as silicon wafers. Taking crystalline silicon batteries as an example, in order to increase the passivation of the surface of crystalline silicon and reduce the recombination of photogenerated carriers, it is necessary A layer of aluminum oxide is deposited on the surface of crystalline silicon, and the existing methods are mostly prepared by PECVD (plasma enhanced chemical deposition equipment) or ALD (atomic layer deposition equipment), that is, the silicon wafer substrate is placed on a graphite boat or an aluminum boat carrier respectively. In the high-temperature furnace tube, aluminum oxide is deposited on the surface o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/52C23C16/54
CPCC23C16/45544C23C16/52C23C16/54
Inventor 陶俊张三洋王雪楠刘敏星高根震姚丽英
Owner 无锡琨圣智能装备股份有限公司
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