Eutectic electrode structure of flip LED chip
A technology of LED chip and electrode structure, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of tin infiltration and affect the performance of wafers, and achieve the effect of firm internal structure and improved resistance to tin penetration
Pending Publication Date: 2021-06-15
GUANGDONG DELI PHOTOELECTRIC
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[0002] At present, the chip of the flip-chip LED chip usually uses tin alloy as the electrode structure, and the chip is welded on the substrate plated with gold or silver, which is mainly soldered by solder paste. When the substrate is heated to a suitable eutectic temperature, the Gold or silver elements penetrate into the electrode structure of the chip, the eutectic layer solidifies and the LED is soldered on the substrate, but the solder paste has strong permeability, and tin seepage often occurs during the soldering process, which seriously affects the performance of the chip
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[0020] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.
[0021] Such as figure 1 As shown, the preferred embodiment of the present invention is a eutectic electrode structure for a flip-chip LED chip, which includes a Ti metal layer 1, a Ni metal layer or a Ni alloy layer 2, an Au metal layer 3, and And the SnAu-based alloy layer 4, the SnAu-based alloy layer 4 is formed by periodically interlacing n layers of Sn metal layers and n layers of Au metal layers 3, wherein n≥6.
[0022] Exemplarily, the thickness of the Ti metal layer 1 is 2000 angstroms to 3000 angstroms; the thickness of the Ni metal layer or Ni alloy layer 2 is 1000 angstroms to 3000 angstroms; the thickness of the Au metal layer 3 is 2000 angstroms to 3000 angst...
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Abstract
The invention discloses an eutectic electrode structure of aof flip LED chip. Theeutectic electrode structure comprises a Ti metal layer, a Ni metal layer or a Ni alloy layer, an Au metal layer and a SnAu-based alloy layer which are sequentially arranged from top to bottom, wherein the SnAu-based alloy layer is formed by n Sn metal layers and n Au metal layers which are periodically arranged in a staggered mode, and n is greater than or equal to 6. According to the invention, the Ti metal layer forms good ohmic contact and is adhered to the chip; the Ni metal layer or the Ni alloy layer can be used as a barrier layer for resisting tin permeation; the Au metal layer is used for connecting the Ni metal layer or the Ni alloy layer and the SnAu-based alloy layer; and the SnAu-based alloy layer is used as a welding layer and is of a multi-period structure, so that solder paste can be prevented from permeating downwards to the chip. Therefore, through the composite design of the Ti metal layer, the Ni metal layer or the Ni alloy layer, the Au metal layer and the SnAu-based alloy layer, the tin penetration resistance of the electrode can be improved, and the internal structure of the electrode is firm.
Description
technical field [0001] The invention belongs to the technical field of flip-chip LED chips, in particular to a eutectic electrode structure of flip-chip LED chips. Background technique [0002] At present, the chip of the flip-chip LED chip usually uses tin alloy as the electrode structure, and the chip is welded on the substrate plated with gold or silver, which is mainly soldered by solder paste. When the substrate is heated to a suitable eutectic temperature, the Gold or silver elements penetrate into the electrode structure of the chip, the eutectic layer solidifies and the LED is soldered on the substrate, but the solder paste has strong permeability, and tin seepage often occurs during the soldering process, which seriously affects the performance of the chip. Contents of the invention [0003] The object of the present invention is to provide a eutectic electrode structure of a flip-chip LED chip that can improve the tin penetration resistance of the electrode and h...
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Login to View More IPC IPC(8): H01L33/40H01L33/38
CPCH01L33/38H01L33/40
Inventor 郝锐易翰翔李玉珠张洪安武杰
Owner GUANGDONG DELI PHOTOELECTRIC